CP307-MPSA13-WN [CENTRAL]
Transistor;
| 型号： | CP307-MPSA13-WN |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CP307
Central
Small Signal Transistor
NPN - Silicon Darlington Transistor Chip
Semiconductor Corp.
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
Die Thickness
27 x 27 MILS
9.0 MILS
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
5.3 x 3.8 MILS
5.3 x 6.5 MILS
Al - 30,000Å
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
15,440
PRINCIPAL DEVICE TYPES
2N6426
2N6427
CMPT6427
CMPTA13
CMPTA14
CXTA14
CZTA14
MPSA13
MPSA14
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R3 (1-August 2002)
www.centralsemi.com
TM
PROCESS CP307
Central
Typical Electrical Characteristics
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R3 (1-August 2002)
www.centralsemi.com
相关型号：
CP308
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)
PANJIT
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