CP588-2N2605-WS [CENTRAL]
Transistor;
| 型号： | CP588-2N2605-WS |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：645K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PROCESS CP588
Small Signal Transistor
PNP - Low Noise Amplifier Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
15 x 15 MILS
9.0 MILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
4.0 x 4.0 MILS
5.5 x 5.5 MILS
Al - 30,000Å
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
53,730
PRINCIPAL DEVICE TYPES
2N2605
2N3799
PN4250A
CMPT5086
CMPT5087
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-August 2006)
PROCESS CP588
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-August 2006)
相关型号：
©2020 ICPDF网 联系我们和版权申明