CP591V-CMST2907A-WS [CENTRAL]
Transistor;![CP591V-CMST2907A-WS](http://pdffile.icpdf.com/pdf2/p00251/img/icpdf/CP591V-CXT29_1520363_icpdf.jpg)
型号: | CP591V-CMST2907A-WS |
厂家: | ![]() |
描述: | Transistor |
文件: | 总2页 (文件大小:651K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PROCESS CP591V
Small Signal Transistor
PNP - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
19 x 19 MILS
7.1 MILS
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
3.5 x 4.3 MILS
3.5 x 4.5 MILS
Al - 30,000Å
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
30,600
PRINCIPAL DEVICE TYPES
2N2905A
2N2907A
CMPT2907A
CMST2907A
CXT2907A
CZT2907A
PN2907A
BACKSIDE COLLECTOR
R1
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (21-August 2006)
PROCESS CP591V
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (21-August 2006)
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