CP630-CJD127-WS [CENTRAL]

Transistor;


型号：	CP630-CJD127-WS
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	Transistor
文件：	总2页 (文件大小：458K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PROCESS CP630

Power Transistor

PNP - Silicon Darlington Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

80 x 80 MILS

8.0 MILS

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

18 x 27 MILS

34 x 34 MILS

Al - 30,000Å

Ti/Pd/Ag - 20,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

1,445

PRINCIPAL DEVICE TYPES

CZT127

CJD127

R2 (22-March 2010)

www.centralsemi.com

PROCESS CP630

Typical Electrical Characteristics

R2 (22-March 2010)

www.centralsemi.com

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