CQ89-2MTR13 [CENTRAL]
TRIAC, 600V V(DRM), 2A I(T)RMS,;
| 型号： | CQ89-2MTR13 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | TRIAC, 600V V(DRM), 2A I(T)RMS, 栅 三端双向交流开关 栅极 |
| 文件： | 总2页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CQ89-2M
CQ89-2N
www.centralsemi.com
SURFACE MOUNT
2 AMP SILICON TRIAC
600 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ89-2M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
SYMBOL
CQ89-2M CQ89-2N
600 800
UNITS
V
C
Peak Repetitive Off-State Voltage
V
DRM
RMS On-State Current (T =50°C)
I
2.0
20
A
C
T(RMS)
Peak One Cycle Surge, t=10ms
I2t Value for Fusing, t=10ms
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Operating Junction Temperature
Storage Temperature
I
A
A2s
TSM
I2t
2.0
3.0
0.2
1.2
8.0
P
W
GM
P
W
G(AV)
I
A
GM
V
V
GM
T
J
-40 to +125
-40 to +150
180
°C
T
°C
stg
Thermal Resistance
Θ
Θ
°C/W
°C/W
JA
Thermal Resistance
90
JC
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
μA
I
Rated V
Rated V
R
=1KΩ
5.0
200
5.00
8.00
5.0
DRM
DRM, GK
, R =1KΩ, T =125°C
I
μA
DRM
DRM GK
C
I
V =12V, QUAD I, II, III
1.35
3.75
1.2
mA
mA
mA
V
GT
D
I
V =12V, QUAD IV
D
GT
I
R
=1KΩ
H
GK
V =12V, QUAD I, II, III, IV
V
1.1
1.8
GT
D
V
I
I
=2.0A, tp=380μs
1.50
1.7
1.75
2.0
V
TM
TM
V
=3.0A, tp=380μs
2
V
TM
TM
dv/dt
V = / V
T =125°C
2.5
V/μs
3
D
DRM, C
R1 (12-February 2010)
CQ89-2M
CQ89-2N
SURFACE MOUNT
2 AMP SILICON TRIAC
600 THRU 800 VOLTS
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Gate
2) MT2
3) MT1
MARKING:
FULL PART NUMBER
R1 (12-February 2010)
www.centralsemi.com
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