CQ89M [CENTRAL]
2.0 AMP TRIAC 400 THRU 800 VOLTS; 2.0 AMP TRIAC 400 THRU 800伏
| 型号： | CQ89M |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 2.0 AMP TRIAC 400 THRU 800 VOLTS |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CQ89D
CQ89M
CQ89N
Ce n t r a l
S e m ic o n d u c t o r Co r p .
2.0 AMP TRIAC
400 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ89D
series types are epoxy molded silicon triacs
designed for full wave AC control applications
featuring gate triggering in all four (4)
quadrants.
SOT-89 CASE
o
MAXIMUM RATINGS (T =25 C)
C
SYMBOL
CQ89D
CQ89M
CQ89N UNITS
Peak Repetitive Off-State Voltage
V
400
600
800
V
A
DRM
o
RMS On-State Current (T =80 C)
C
I
2.0
10
T(RMS)
Peak One Cycle Surge (10ms)
I
A
TSM
Peak Gate Current
I
1.0
A
GM
Average Gate Power Dissipation
StorageTemperature
P
0.1
W
G(AV)
o
T
-45 to +150
-45 to +125
10
C
stg
o
Junction Temperature
Thermal Resistance
T
C
J
o
Θ
C/W
J-C
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
5.00
200
25
UNITS
I
V =Rated V
µA
µA
mA
mA
V
DRM
D
DRM
DRM
o
I
V =Rated V
, T =125 C
DRM
D
C
I
V =12V, QUAD I, II, III, IV
GT
D
I
V =12V
D
25
H
V
V =12V
2.00
1.75
GT
D
V
I =3.0A
T
V
TM
o
dv/dt
V =
V
, T =125 C
100
V/µs
2
D
DRM
C
3
252
All dimensions in inches (mm).
LEAD CODE:
1) GATE
2) MT2
3) MT1
R2
253
相关型号：
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