CQDD-8NTR13PBFREE [CENTRAL]
TRIAC, 800V V(DRM), 8A I(T)RMS,;
| 型号： | CQDD-8NTR13PBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | TRIAC, 800V V(DRM), 8A I(T)RMS, 栅 三端双向交流开关 栅极 |
| 文件： | 总2页 (文件大小：399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CQDD-8M
CQDD-8N
www.centralsemi.com
SURFACE MOUNT
8 AMP SILICON TRIAC
600 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-8M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
SYMBOL
CQDD-8M CQDD-8N
600 800
UNITS
V
C
Peak Repetitive Off-State Voltage
V
DRM
RMS On-State Current (T =90°C)
C
Peak One Cycle Surge, t=8.3ms
I
8.0
50
10
40
1.0
4.0
16
10
A
T(RMS)
I
A
A2s
TSM
I2t
2
I t Value for Fusing, t=8.3m
Peak Gate Power, tp=10μs
P
GM
W
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current Repetitive, f=60Hz
Operating Junction Temperature
Storage Temperature
P
W
G(AV)
I
A
GM
V
V
GM
di/dt
A/μs
°C
T
-40 to +125
-40 to +150
60
J
T
°C
stg
Thermal Resistance
Θ
°C/W
°C/W
JA
JC
Thermal Resistance
Θ
3.2
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
μA
I
I
I
I
I
Rated V
Rated V
10
500
20
DRM
DRM
GT
DRM
, T =125°C
μA
DRM
C
V =12V, R =10Ω, QUAD I, II, III
4.5
17
mA
mA
mA
V
D
L
V =12V, R =10Ω, QUAD IV
50
GT
D
L
I =100mA
4.7
25
H
T
V
V
V
V =12V, R =10Ω, QUAD I, II, III
0.95
1.35
1.30
1.50
2.50
1.75
GT
GT
TM
D
L
V =12V, R =10Ω, QUAD IV
V
D
L
I
=11A, tp=380μs
V
TM
2
dv/dt
V = / V
, R =∞, T =125°C
5.0
V/μs
3
D
DRM GK
C
R2 (12-February 2010)
CQDD-8M
CQDD-8N
SURFACE MOUNT
8 AMP SILICON TRIAC
600 THRU 800 VOLTS
D2PAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) MT1
2) MT2
3) Gate
4) MT2
MARKING:
FULL PART NUMBER
R2 (12-February 2010)
www.centralsemi.com
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