CR3-010LEADFREE [CENTRAL]
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,;
| 型号： | CR3-010LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, 整流二极管 |
| 文件： | 总2页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CR3-005GPP SERIES
GLASS PASSIVATED JUNCTION
GENERAL PURPOSE
SILICON RECTIFIER
3 AMP, 50 THRU 1200 VOLTS
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CR3-005GPP
Series types are 3.0 Amp Glass Passivated Junction
Silicon Rectifiers which are high quality, well
constructed, highly reliable components designed
for use in all types of military, commercial, industrial,
entertainment, computer, and automotive applications.
THIS DEVICE IS MANUFACTURED WITH A GLASS
PASSIVATED CHIP FOR OPTIMUM RELIABILITY.
DO-201AD CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
A
CR3 CR3 CR3 CR3 CR3 CR3 CR3 CR3
-005 -010 -020 -040 -060 -080 -100 -120
SYMBOL GPP GPP GPP GPP GPP GPP GPP GPP UNITS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
50
50
35
100
100
70
200
200
140
400
400
280
600
600
420
800 1000 1200
V
V
V
A
A
RRM
V
800 1000 1200
R
RMS Reverse Voltage
V
560
700
840
R(RMS)
Average Forward Current (T =55°C)
A
Peak Forward Surge Current
I
3.0
O
I
150
FSM
Operating and Storage
Junction Temperature
T , T
stg
-65 to +150
20
°C
J
Thermal Resistance
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
TYP
MAX
UNITS
I
V =Rated V
5.0
µA
µA
V
R
R
RRM
RRM
I
V =Rated V
, T =100°C
100
1.2
50
R
R
A
V
I =3.0A
F
F
C
V =4.0V, f=1.0MHz
30
pF
J
R
R4 (24-October 2011)
CR3-005GPP SERIES
GLASS PASSIVATED JUNCTION
GENERAL PURPOSE
SILICON RECTIFIER
3 AMP, 50 THRU 1200 VOLTS
DO-201AD CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R4 (24-October 2011)
www.centralsemi.com
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