CR6A8GPPLEADFREE [CENTRAL]
Rectifier Diode, 1 Phase, 1 Element, 6A, 800V V(RRM), Silicon, PLASTIC, CASE 106, 2 PIN;
| 型号： | CR6A8GPPLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 6A, 800V V(RRM), Silicon, PLASTIC, CASE 106, 2 PIN 整流二极管 测试 |
| 文件： | 总2页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CR6A2GPP CR6A8GPP
CR6A4GPP CR6A10GPP
CR6A6GPP
Central
Semiconductor Corp.
GLASS PASSIVATED JUNCTION
GENERAL PURPOSE SILICON RECTIFIER
6A, 200 THRU 1000 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CR6A4GPP Series
types are 6.0 Amp Glass Passivated Junction Silicon
Rectifiers which are high quality, well constructed, highly
reliable components designed for use in all types of
military, commercial, industrial, entertainment, computer,
and automotive applications.
THIS DEVICE IS MANUFACTURED WITH A GLASS
PASSIVATED CHIP FOR OPTIMUM RELIABILITY.
MARKING: FULL PART NUMBER
CASE 106
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
CR6A
A
SYMBOL 2GPP 4GPP 6GPP 8GPP 10GPP UNITS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
200
200
140
240
400
400
280
480
600
600
420
720
800
800
560
960
1000
1000
700
V
V
V
V
RRM
V
R
RMS Reverse Voltage
V
R(RMS)
V
Non-Repetitive Peak Reverse Voltage
(Halfwave, single phase, 60Hz peak)
1200
RSM
Average Forward Current, T =60°C
I
6.0
A
A
A
O
Non-Repetitive Peak Forward Surge Current
(Halfwave, single phase, 60Hz peak)
I
400
FSM
Operating and Storage Junction Temperature
T , T
stg
-65 to +175
°C
J
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted))
A
SYMBOL
TEST CONDITIONS
MAX
UNITS
μA
I
I
V =Rated V
R
10
R
R
RRM
RRM
V =Rated V
, T =100°C
1.0
1.0
mA
V
R
A
V
I =6.0A
F
F
R1 (1-May 2008)
TM
CR6A2GPP CR6A8GPP
CR6A4GPP CR6A10GPP
CR6A6GPP
Central
Semiconductor Corp.
GLASS PASSIVATED JUNCTION
GENERAL PURPOSE SILICON RECTIFIER
6A, 200 THRU 1000 VOLTS
CASE 106 - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R1 (1-May 2008)
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Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, PLASTIC, CASE 106, 2 PIN
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