CS218I-30BLEADFREE [CENTRAL]
Silicon Controlled Rectifier, 30A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-218;
| 型号： | CS218I-30BLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Silicon Controlled Rectifier, 30A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-218 局域网 栅 栅极 |
| 文件： | 总2页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CS218I-30B CS218I-30N
CS218I-30D CS218I-30P
CS218I-30M CS218I-30PB
www.centralsemi.com
ISOLATED TAB
DESCRIPTION:
SILICON CONTROLLED RECTIFIERS
30 AMP, 200 THRU 1200 VOLT
The CENTRAL SEMICONDUCTOR CS218I-30B series
types are epoxy molded SCRs designed for sensing
circuit and control system applications. This device is
mounted in a TO-218 case with an isolated mounting
tab.
MARKING: FULL PART NUMBER
TO-218 THYRISTOR CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
CS218I
C
SYMBOL
-30B -30D -30M -30N -30P -30PB UNITS
Peak Repetitive Off-State Voltage
V
, V
200 400
600
800 1000 1200
V
DRM RRM
RMS On-State Current (T =85°C)
C
I
30
400
800
50
A
T(RMS)
Peak One Cycle Surge Current, t=10ms
I2t Value for Fusing, t=10ms
Peak Gate Power Dissipation, tp=10μs
Average Gate Power Dissipation
Peak Forward Gate Current, tp=10μs
Peak Forward Gate Voltage, tp=10μs
Peak Reverse Gate Voltage
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
I
A
A2s
TSM
I2t
P
W
GM
P
1.0
4.0
16
W
G(AV)
I
A
FGM
V
V
FGM
V
5.0
100
V
RGM
di/dt
A/μs
°C
°C
°C/W
°C/W
T
-40 to +125
-40 to +150
50
J
T
stg
Thermal Resistance
Θ
JA
JC
Thermal Resistance
Θ
1.1
Isolation Voltage
V
2500
V
(RMS)
ISO
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
I
, I
Rated V
, V
20
6.0
50
ꢀA
DRM RRM
DRM RRM
, I
Rated V , V
DRM RRM
, T =125°C
mA
mA
mA
V
DRM RRM
C
V =12V, R =33Ω
GT
H
D
L
I =500mA
75
T
V
V =12V, R =33Ω
1.5
2.1
D
L
GT
TM
V
I
=60A, tp=380ms
V
TM
dv/dt
V =⅔Rated V
,
D
DRM
=∞, T =125°C (200V thru 800V)
R
500
250
V/ꢀs
GK
C
dv/dt
V =⅔Rated V
,
D
DRM
=∞, T =125°C (1000V, 1200V)
R
V/ꢀs
GK
C
R2 (4-November 2013)
CS218I-30B CS218I-30N
CS218I-30D CS218I-30P
CS218I-30M CS218I-30PB
ISOLATED TAB
SILICON CONTROLLED RECTIFIERS
30 AMP, 200 THRU 1200 VOLT
TYPICAL ELECTRICAL CHARACTERISTICS
TO-218 THYRISTOR CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
3) Gate
Tab is isolated from all leads
MARKING: FULL PART NUMBER
R2 (4-November 2013)
www.centralsemi.com
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