CS55DZ [CENTRAL]
SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS; 可控硅整流0.8 AMPS ， 200和400伏
| 型号： | CS55DZ |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS |
| 文件： | 总2页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
CS55BZ
CS55DZ
SILICON CONTROLLED RECTIFIER
0.8 AMPS, 200 AND 400 VOLTS
TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS55BZ series type are epoxy molded silicon controlled rectifiers designed
for applications requiring extremely low gate sensitivity.
MAXIMUM RATINGS (T =25°C unless otherwise noted)
A
SYMBOL
CS55BZ
200
CS55DZ
400
UNITS
V
Peak Repetitive Off-State Voltage
V
,V
DRM RRM
o
RMS On-State Current (T =60 C)
C
I
0.8
10
A
A
T(RMS)
Peak One Cycle Surge (t=10ms)
I
TSM
2
2
2
I t Value for Fusing (t=10ms)
I t
0.24
2.0
A s
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Storage Temperature
P
W
GM
P
0.1
1.0
8.0
W
G(AV)
I
A
GM
V
V
GM
T
T
-40 to +125
-40 to +125
200
°C
stg
J
Junction Temperature
°C
Thermal Resistance
Θ
Θ
°C/W
°C/W
JA
JC
Thermal Resistance
100
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
100
MAX
UNITS
I
I
I
I
,I
Rated V
Rated V
,V
, R =1KΩ
DRM RRM GK
1.00
µA
DRM RRM
DRM RRM GK
,I
,V , R =1KΩ, T =125°C
µA
DRM RRM
C
V =12V
20
5.00
0.8
µA
mA
V
GT
H
D
R
=1KΩ
GK
V
V
V =12V
GT
D
I
=1.0A
1.70
V
TM
TM
dv/dt
V =.67 x V
, R =1KΩ, T =125°C
DRM GK
25
V/µs
D
C
(SEE REVERSE SIDE)
R1
CS55BZ / CS55DZ
SILICON CONTROLLED RECTIFIER
RMS ON-STATE CURRENT vs. CASE
TEMPERATURE
MAXIMUM ON-STATE
CHARACTERISTICS
1
0.8
0.6
0.4
0.2
0
2
1.5
1
TC=125°C
0.5
0
TC=25°C
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
TC, CASE TEMPERATURE (°C)
VTM, ON-STATE VOLTAGE (V)
TO-92 PACKAGE - MECHANICAL OUTLINE
A
DIMENSIONS
INCHES
B
MILLIMETERS
1 2 3
SYMBOL MIN
MAX
MIN
MAX
5.21
5.33
-
A (DIA)
0.175 0.205 4.45
0.170 0.210 4.32
B
C
D
E
F
G
H
I
0.500
-
12.70
0.016 0.022 0.41
0.100
0.56
2.54
C
0.050
1.27
0.125 0.165 3.18
0.080 0.105 2.03
0.015
4.19
2.67
0.38
D
TO-92 (REV: R1)
E
F
Lead Code:
1) Anode
2) Gate
3) Cathode
G
H
I
R1
相关型号：
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