CS89NTR [CENTRAL]
Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC PACKAGE-3;
| 型号： | CS89NTR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC PACKAGE-3 |
| 文件： | 总2页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CS89M
CS89N
www.centralsemi.com
SURFACE MOUNT
0.8 AMP SILICON SCR
600 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS89M series
type is an Epoxy Molded Silicon Controlled Rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
SYMBOL
CS89M
CS89N UNITS
C
Peak Repetitive Off-State Voltage
V
V
600
800
V
A
DRM, RRM
I
RMS On-State Current (T =60°C)
C
0.8
10
T(RMS)
Peak One Cycle Surge, t=10ms
I2t Value for Fusing, t=10ms
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Operating Junction Temperature
Storage Temperature
I
A
A2s
TSM
I2t
0.24
2.0
0.1
1.0
8.0
P
W
GM
P
W
G(AV)
I
A
GM
V
V
GM
T
-40 to +125
-40 to +150
104
°C
°C
°C/W
J
T
stg
Thermal Resistance
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.0
UNITS
μA
I
I
I
I
I
Rated V
Rated V
V
R
=1KΩ
DRM, RRM
DRM, RRM, GK
, V
I
R
=1KΩ, T =125°C
100
200
5.0
μA
DRM, RRM
DRM RRM, GK
C
V =12V
20
μA
GT
H
D
R
=1KΩ
0.25
0.61
1.2
mA
V
GK
V =12V
V
V
0.8
GT
D
I
=1.0A, tp=380μs
1.7
V
TM
TM
V =2/3 V
dv/dt
R
=1KΩ, T =125°C
25
V/μs
D
DRM, GK
C
R1 (12-February 2010)
CS89M
CS89N
SURFACE MOUNT
0.8 AMP SILICON SCR
600 THRU 800 VOLTS
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Gate
2) Anode
3) Cathode
MARKING:
FULL PART NUMBER
R1 (12-February 2010)
www.centralsemi.com
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