CSHD8-100TR13 [CENTRAL]
Rectifier Diode, Schottky, 1 Element, 8A, 100V V(RRM),;
| 型号： | CSHD8-100TR13 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, Schottky, 1 Element, 8A, 100V V(RRM), |
| 文件： | 总2页 (文件大小：493K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CSHD8-60
CSHD8-100
CSHD8-200
www.centralsemi.com
SURFACE MOUNT SILICON
SCHOTTKY RECTIFIERS
8.0 AMP, 60 THRU 200 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSHD8-60,
CSHD8-100 and CSHD8-200 are silicon Schottky
rectifiers with an 8.0 Amp forward current rating and
a very high reverse voltage capability. The reverse
capability of these devices makes them the ideal
solution for high efficiency, high voltage applications
such as solid state lighting, DC-DC converters, and a
host of other power management uses.
MARKING: FULL PART NUMBER
DPAK CASE
FEATURES:
• High reverse voltage capability
• Energy efficient, low forward voltage (V )
F
• Low reverse leakage at elevated temperature
• High surge capability
MAXIMUM RATINGS: (T =25°C)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
SYMBOL CSHD8-60 CSHD8-100 CSHD8-200 UNITS
A
V
60
60
42
100
200
200
140
V
RRM
V
100
V
R
RMS Reverse Voltage
V
70
8.0
V
R(RMS)
Average Forward Current (T =75°C)
L
I
A
O
Peak Forward Surge Current, tp=8.3ms
Operating and Storage Junction Temperature
Typical Thermal Resistance
I
85
A
FSM
T , T
-65 to +175
5.0
°C
°C/W
J
stg
Θ
JL
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MAX
UNITS
I
V =Rated V
50
μA
R
R
RRM
I
V =Rated V
T =100°C
20
mA
V
R
R
RRM, J
V
V
V
I =8.0A (CSHD8-60)
0.75
0.80
0.90
F
F
F
F
I =8.0A (CSHD8-100)
V
F
I =8.0A (CSHD8-200)
V
F
R3 (21-January 2013)
CSHD8-60
CSHD8-100
CSHD8-200
SURFACE MOUNT SILICON
SCHOTTKY RECTIFIERS
8.0 AMP, 60 THRU 200 VOLT
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Anode
2) Cathode
3) Anode
4) Cathode
Pin 2 is common to the tab (4)
MARKING: FULL PART NUMBER
R3 (21-January 2013)
www.centralsemi.com
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