CTLM7110-M832D [CENTRAL]
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER; 表面贴装的N-沟道增强型MOSFET硅，低VF硅肖特基整流器
| 型号： | CTLM7110-M832D |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER |
| 文件： | 总2页 (文件大小：533K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTLM7110-M832D
™
MULTI DISCRETE MODULE
www.centralsemi.com
SURFACE MOUNT N-CHANNEL
ENHANCEMENT-MODE SILICON MOSFET
AND
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLM7110-
M832D consists of an N-Channel Enhancement-mode
LOW V SILICON SCHOTTKY RECTIFIER
F
MOSFET and a Low V Schottky Rectifier. Packaged
F
in a small, thermally efficient, leadless 3x2mm surface
mount case, it is designed for applications where
small size, operational efficiency, and low energy
consumption are the prime requirements.
MARKING CODE: CFL
TLM832D CASE
FEATURES
• Device is Halogen Free by design
• Dual Chip Device
APPLICATIONS
• Load Power Switches
• DC - DC Converters
• LCD Backlighting
• High Current (1.0A) MOSFET and Schottky Rectifier
• Low r
: 0.25Ω MAX @ V =1.5V
DS(ON)
GS
• Low V Schottky Rectifier (550mV @ 1.0A MAX)
F
• ESD Protection up to 2KV
• Battery powered portable devices
including Cell Phones, Digital Cameras,
Pagers, PDAs, Notebook PCs, etc.
• Small TLM 3x2mm Leadless Surface Mount Package
• Complementary Device: CTLM8110-M832D
MAXIMUM RATINGS - CASE: (T =25°C)
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
UNITS
W
°C
A
P
1.65
-65 to +150
76
D
T
T
J, stg
Θ
°C/W
JA
MAXIMUM RATINGS - Q1: (T =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
A
V
V
I
20
8.0
1.0
4.0
V
V
A
A
DS
GS
D
I
DM
MAXIMUM RATINGS - D1: (T =25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp<1.0ms
Peak Forward Surge Current, tp=8.0ms
A
V
40
1.0
3.5
10
V
A
A
A
RRM
F
I
I
FRM
I
FSM
ELECTRICAL CHARACTERISTICS - Q1: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
10
10
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
nC
nC
nC
S
I
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
=8.0V, V =0
GSSF GSSR
DSS
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DS
DS
DS
=20V, V =0
GS
BV
V
V
r
r
r
Q
Q
Q
=0, I =250μA
=10V, I =1.0mA
=0, I =1.0A
20
0.5
DSS
GS(th)
SD
DS(ON)
DS(ON)
DS(ON)
D
1.2
1.1
0.10
0.14
0.25
D
S
=4.5V, I =0.5A
0.075
0.10
0.17
2.4
0.25
0.65
4.2
D
=2.5V, I =0.5A
D
=1.5V, I =0.1A
D
=10V, V =4.5V, I =1.0A
g(tot)
gs
GS
D
D
D
=10V, V =4.5V, I =1.0A
GS
=10V, V =4.5V, I =1.0A
GS
gd
FS
g
=10V, I =0.5A
D
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2.
R2 (2-August 2011)
CTLM7110-M832D
™
MULTI DISCRETE MODULE
SURFACE MOUNT N-CHANNEL
ENHANCEMENT-MODE SILICON MOSFET
AND
LOW V SILICON SCHOTTKY RECTIFIER
F
ELECTRICAL CHARACTERISTICS - Q1 - Continued: (T =25°C)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
45
220
120
25
MAX
UNITS
pF
pF
pF
ns
C
C
C
t
t
V
V
V
V
V
=10V, V =0, f=1.0MHz
rss
iss
oss
DS
DS
DS
DD
DD
GS
=10V, V =0, f=1.0MHz
GS
=10V, V =0, f=1.0MHz
GS
=10V, V =5.0V, I =0.5A
on
off
GS
D
D
=10V, V =5.0V, I =0.5A
140
ns
GS
ELECTRICAL CHARACTERISTICS - D1: (T =25°C)
A
SYMBOL
TEST CONDITIONS
V =5.0V
MIN
TYP
MAX
10
20
UNITS
μA
μA
μA
V
V
V
V
V
I
I
I
R
R
R
R
V =8.0V
R
V =15V
50
R
BV
I =100μA
40
R
R
V
V
V
V
I =10mA
0.29
0.36
0.45
0.55
F
F
F
F
F
I =100mA
F
I =500mA
F
I =1.0A
F
C
V =4.0V, f=1.0MHz
50
pF
J
R
TLM832D CASE - MECHANICAL OUTLINE
SUGGESTED MOUNTING PADS
For Maximum Power Dissipation
(Dimensions in mm)
For standard mounting refer
to TLM832D Package Details
PIN CONFIGURATION
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Anode D1
4) Anode D1
5) Cathode D1
6) Cathode D1
7) Drain Q1
8) Drain Q1
MARKING CODE: CFL
* Note:
- Exposed pad P1 common to pins 7 and 8
- Exposed pad P2 common to pins 5 and 6
R2 (2-August 2011)
www.centralsemi.com
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