CTLSH05-40M621 [CENTRAL]

SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE; 表面贴装小VF硅肖特基二极管
CTLSH05-40M621
型号: CTLSH05-40M621
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE
表面贴装小VF硅肖特基二极管

肖特基二极管
文件: 总2页 (文件大小:158K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TM  
Central  
CTLSH05-40M621  
SURFACE MOUNT  
Semiconductor Corp.  
LOW V  
DESCRIPTION:  
F
SILICON SCHOTTKY DIODE  
The CENTRAL SEMICONDUCTOR  
CTLSH05-40M621 Low V Schottky Diode packaged in a  
F
TLM™ (Tiny Leadless Module™), is a high quality  
Schottky Diode designed for applications where small size  
and operational effciency are the prime requirements. With  
a maximum power dissipation of 0.9W, and a very small  
package footprint (comparable to the SOT-563), this  
leadless package design is capable of dissipating over 3  
times the power of similar devices in comparable sized  
surface mount packages.  
Top View  
Bottom View  
TLM621 CASE  
FEATURES:  
MARKING CODE: CH  
• Very Small Package Size  
• High Thermal Efficiency  
• Small TLM 2x1mm case  
• Current (I =0.5A)  
APPLICATIONS:  
F
• DC/DC Converters  
• Low Forward Voltage Drop  
• Voltage Clamping  
• Protection Circuits  
(V =0.47V MAX @ 0.5A)  
F
• Battery Powered Portable Equipment  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current, tp 1ms  
Forward Surge Current, tp=8ms  
Power Dissipation  
V
40  
500  
3.5  
10  
V
mA  
A
RRM  
I
F
I
FRM  
I
A
FSM  
P
D
0.9  
W*  
Operating and Storage  
Junction Temperature  
T , T  
-65 to +150  
139  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W*  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V = 10V  
R
20  
μA  
R
I
V = 30V  
100  
μA  
R
R
BV  
I = 500μA  
40  
V
R
R
V
F
I = 100μA  
0.13  
0.21  
0.27  
0.35  
0.47  
50  
V
V
F
V
F
I = 1.0mA  
F
V
F
I = 10mA  
F
V
V
F
I = 100mA  
F
V
V
F
I = 500mA  
F
V
C
T
V =1.0V, f=1.0MHz  
R
pF  
*FR-4 Epoxy PCB with copper mounting pad area of 33mm2  
R1 (27-April 2006)  
TM  
CTLSH05-40M621  
SURFACE MOUNT  
Central  
Semiconductor Corp.  
LOW V  
F
SILICON SCHOTTKY DIODE  
TLM621 CASE - MECHANICAL OUTLINE  
Suggested mounting pad layout  
for maximum power dissipation  
(Dimensions in mm)  
For standard mounting see  
TLM621 Package Details  
LEAD CODE:  
1) CATHODE  
2) CATHODE  
3) ANODE  
4) ANODE  
5) CATHODE  
6) CATHODE  
MARKING CODE: CH  
R1 (27-April 2006)  

相关型号:

CTLSH05-40M621TR

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, 2 X 1 MM, ROHS COMPLIANT, LEAD LESS, CASE TLM621, 6 PIN
CENTRAL
CENTRAL

CTLSH05-4M521

SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE
CENTRAL

CTLSH1-40M322

SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TINY LEADLESS MODULE
CENTRAL

CTLSH1-40M322BK

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, 2 X 2 MM, ROHS COMPLIANT, LEAD LESS, CASE TLM322, 3 PIN
CENTRAL

CTLSH1-40M322BKPBFREE

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM),
CENTRAL

CTLSH1-40M322S

暂无描述
CENTRAL

CTLSH1-40M322TR

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, 2 X 2 MM, ROHS COMPLIANT, LEAD LESS, CASE TLM322, 3 PIN
CENTRAL

CTLSH1-40M322TRPBFREE

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM),
CENTRAL

CTLSH1-40M322_10

SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY RECTIFIER
CENTRAL

CTLSH1-40M563

SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY RECTIFIER
CENTRAL
CENTRAL