CTLT853-M833BK [CENTRAL]
暂无描述;
| 型号： | CTLT853-M833BK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总2页 (文件大小：596K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTLT853-M833
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT853-M833 is
a high performance 6.0A High Current NPN Transistor
designed for applications where small size and
operational efficiency are prime requirements. With a
maximum power dissipation of 4.5W, and a very small
package footprint, this device is 80% smaller than a
comparible SOT-223 device. This leadless package
design has a watts per unit area at least twice that of
equivalent package devices.
TLM833 CASE
MARKING CODE: CHA3
• PNP Complement: CTLT953-M833
FEATURES:
• High Voltage (200V)
• High Current (I =6.0A) • 3 x 3mm TLM™ case
• High Thermal Efficiency
C
• Low V
= 340mV MAX @ 5.0A
CE(SAT)
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
UNITS
V
A
V
V
V
200
100
CBO
CEO
EBO
Collector-Emitter Voltage
V
V
Emitter-Base Voltage
6.0
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
Thermal Resistance (Note 3)
I
6.0
A
C
P
P
P
4.5
W
D
D
D
4.0
W
2.5
W
T , T
-65 to +150
27.78
31.25
50.00
°C
J
stg
Θ
Θ
Θ
°C/W
°C/W
°C/W
JA
JA
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
I
V
V
V
V
=150V
10
1.0
10
10
nA
CBO
CBO
CER
EBO
CB
CB
CE
EB
=150V, T =100°C
μA
nA
nA
V
A
=150V, R ≤1.0kΩ
BE
=6.0V
BV
BV
BV
BV
I =100μA
200
200
100
6.0
220
210
110
8.0
22
CBO
C
I =10mA, R ≤1.0kΩ
BE
V
CER
C
I =10mA
V
CEO
C
I =100μA
V
EBO
E
V
V
V
V
I =100mA, I =5.0mA
50
mV
mV
mV
V
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
C
B
I =2.0A, I =100mA
135
170
340
1.25
C
B
I =5.0A, I =500mA
C
B
I =5.0A, I =500mA
C
B
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 75 mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 75 mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 25 mm2
R1 (17-February 2010)
CTLT853-M833
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
h
h
h
h
V
V
V
V
V
V
=2.0V, I =10mA
100
FE
FE
FE
FE
CE
CE
CE
CE
CE
CB
C
=2.0V, I =2.0A
100
50
200
100
30
300
C
=2.0V, I =4.0A
C
=2.0V, I =10A
20
C
f
=10V, I =100mA, f=50MHz
190
38
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
E
ob
TLM833 CASE - MECHANICAL OUTLINE
REQUIRED MOUNTING PADS
(Dimensions in mm)
LEAD CODE:
1) Emitter
2) Emitter
3) Base
5) Collector
6) Collector
7) Collector
8) Collector
4) N.C.
Failure to use this mouning pad layout may
result in damage to device.
MARKING CODE: CHA3
R1 (17-February 2010)
www.centralsemi.com
相关型号：
CTLT953-M833TR
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 3 MM, ROHS COMPLIANT, CASE TLM833, 8 PIN
CENTRAL
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