CXT3150TR [CENTRAL]
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3;型号: | CXT3150TR |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 晶体 晶体管 |
文件: | 总2页 (文件大小:86K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TM
Central
CXT3150
Semiconductor Corp.
SURFACE MOUNT
NPN SILICON POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3150
type is
a NPN Silicon Power Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current, high gain, fast
switching applications.
POWER TM
89
MARKING CODE: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
50
25
V
V
CBO
V
CEO
V
7.0
5.0
1.0
1.2
V
EBO
I
A
C
Base Current
I
A
B
Power Dissipation
P
W
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
-65 to +150
104
°C
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.0
UNITS
I
V
V
=50V
µA
µA
V
CBO
CB
I
=7.0V
1.0
EBO
EB
BV
I =10mA
C
25
CEO
V
I =3.0A, I =150mA
0.5
0.6
V
CE(SAT)
C
B
V
I =4.0A, I =200mA
V
CE(SAT)
C
B
V
I =3.0A, I =150mA
1.10
1.40
550
V
BE(SAT)
C
B
V
I =4.0A, I =200mA
V
BE(SAT)
C
B
h
V
=2.0V, I =500mA
250
150
50
FE
CE
CE
CE
CE
CB
C
h
V
V
V
V
=2.0V, I =2.0A
C
FE
h
=2.0V, I =5.0A
FE
C
f
=6.0V, I =50mA, f=200MHz
C
150
MHz
pF
T
C
=10V, I =0, f=1.0MHz
50
ob
E
R5 (04-May 2005)
TM
CXT3150
Central
Semiconductor Corp.
SURFACE MOUNT
NPN SILICON POWER
TRANSISTOR
SOT-89 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
FULL PART NUMBER
R5 (04-May 2005)
相关型号:
CXT3410TR
Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN
CENTRAL
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