CXT3820 [CENTRAL]

SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON TRANSISTOR; 表面安装非常低VCE ( SAT) NPN硅晶体管
CXT3820
型号: CXT3820
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON TRANSISTOR
表面安装非常低VCE ( SAT) NPN硅晶体管

晶体 晶体管
文件: 总2页 (文件大小:357K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CXT3820  
www.centralsemi.com  
SURFACE MOUNT  
VERY LOW V  
CE(SAT)  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CXT3820 is a  
very low V NPN transistor designed for  
NPN SILICON TRANSISTOR  
CE(SAT)  
applications where electrical and thermal efficiency  
are prime requirements. Packaged in an industry  
standard SOT-89 case, this device brings updated  
electrical specifications and characteristics suitable for  
the most demanding designs.  
MARKING: FULL PART NUMBER  
SOT-89 CASE  
• Device is Halogen Free by design  
FEATURES:  
APPLICATIONS:  
DC/DC Converters  
High Current (I =1.0A)  
C
Voltage Clamping  
Protection Circuits  
V  
=0.28V MAX @  
I =1.0A  
C
CE(SAT)  
SOT-89 surface mount package  
Battery powered Cell Phones, Pagers,  
Digital Cameras, PDAs, Laptops, etc.  
Complementary PNP device: CXT7820  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
SYMBOL  
UNITS  
V
V
V
A
A
mA  
W
°C  
°C/W  
A
V
V
V
80  
60  
5.0  
1.0  
2.0  
CBO  
CEO  
EBO  
C
CM  
I
I
I
P
300  
1.2  
-65 to +150  
104  
B
D
T
T
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
UNITS  
I
I
V
V
=60V  
=5.0V  
nA  
nA  
V
V
V
V
V
V
V
CBO  
EBO  
CB  
EB  
BV  
BV  
BV  
I =100µA  
80  
60  
5.0  
CBO  
CEO  
EBO  
C
I =10mA  
C
I =100µA  
E
V
V
V
V
V
I =100mA, I =1.0mA  
I =500mA, I =50mA  
0.115  
0.15  
0.28  
1.1  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
C
C
B
I =1.0A, I =100mA  
B
I =1.0A, I =50mA  
C
B
V
=5.0V, I =1.0A  
0.9  
V
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
V
V
V
V
V
=5.0V, I =1.0mA  
=5.0V, I =500mA  
200  
200  
100  
150  
C
C
FE  
FE  
=5.0V, I =1.0A  
C
f
=10V, I =50mA  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
10  
ob  
E
R1 (23-February 2010)  
CXT3820  
SURFACE MOUNT  
VERY LOW V  
CE(SAT)  
NPN SILICON TRANSISTOR  
SOT-89 CASE - MECHANICAL OUTLINE  
(Bottom View)  
LEAD CODE:  
1) Emitter  
2) Collector  
3) Base  
MARKING:  
FULL PART NUMBER  
R1 (23-February 2010)  
www.centralsemi.com  

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