CZT2000TR [CENTRAL]
Power Bipolar Transistor, 0.6A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,;
| 型号： | CZT2000TR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 0.6A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, |
| 文件： | 总2页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CZT2000
SURFACE MOUNT
EXTREMELY HIGH VOLTAGE
NPN SILICON
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2000 type is
an NPN Epitaxial Planar Silicon darlington transistor
manufactured in an epoxy molded surface mount
package, designed for applications requiring extremely
high voltages and high gain capability.
DARLINGTON TRANSISTOR
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
V
200
200
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
CES
V
10
V
EBO
Continuous Collector Current
Power Dissipation
I
600
mA
W
C
P
2.0
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
J, stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
500
UNITS
I
I
V
V
=180V
=10V
nA
nA
V
CBO
EBO
CB
100
BE
BV
I =1.0mA
200
CES
CE(SAT)
CE(SAT)
CE(SAT)
BE(ON)
FE
C
V
V
V
V
I =20mA, I =25µA
0.9
1.1
1.2
2.0
V
C
B
I =80mA, I =40µA
V
C
B
I =160mA, I =100µA
V
C
B
V
=5.0V, I =160mA
V
CE
CE
CE
CE
C
h
h
h
V
V
V
=5.0V, I =100µA
3000
3000
3000
C
=5.0V, I =10mA
FE
C
=5.0V, I =160mA
FE
C
R6 (1-March 2010)
CZT2000
SURFACE MOUNT
EXTREMELY HIGH VOLTAGE
NPN SILICON
DARLINGTON TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R6 (1-March 2010)
www.centralsemi.com
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