CZT2680BK [CENTRAL]

Power Bipolar Transistor, 1.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN;
CZT2680BK
型号: CZT2680BK
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

Power Bipolar Transistor, 1.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

文件: 总2页 (文件大小:596K)
中文:  中文翻译
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CZT2680  
SURFACE MOUNT  
HIGH VOLTAGE  
NPN SILICON  
SWITCHING POWER TRANSISTOR  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT2680  
NPN High Voltage Switching Power Transistor,  
manufactured by the epitaxial planar process,  
combines both power and high speed switching  
characteristics in a SOT-223 Surface Mount Package.  
Typical applications include drivers and general high  
voltage switching applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
V
V
V
250  
200  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
6.0  
V
Continuous Collector Current  
Peak Collector Current  
I
1.5  
A
C
I
2.0  
A
CM  
Power Dissipation  
P
2.0  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
=200V  
MIN  
TYP  
MAX  
UNITS  
nA  
V
I
V
100  
CBO  
CB  
I =100µA  
BV  
BV  
BV  
250  
200  
6.0  
435  
275  
9.0  
45  
CBO  
CEO  
C
I =20mA  
V
C
I =100µA  
V
EBO  
E
V
V
V
V
V
I =100mA, I =10mA  
150  
200  
500  
1.10  
1.20  
mV  
mV  
mV  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =500mA, I =50mA  
95  
C
B
I =1.0A, I =150mA  
135  
0.83  
0.95  
105  
90  
C
B
I =500mA, I =50mA  
C
B
I =1.0A, I =150mA  
V
C
B
h
h
h
V
=5.0V, I =20mA  
40  
40  
15  
50  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
=5.0V, I =500mA  
FE  
C
=5.0V, I =1.0A  
47  
FE  
C
f
=20V, I =100mA, f=1.0MHz  
80  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
30  
ob  
E
t
t
I =500mA, V =20V, I = I =50mA  
0.3  
1.0  
µs  
on  
off  
C
CC B1 B2  
I =500mA, V =20V, I = I =50mA  
µs  
C
CC B1 B2  
R3 (1-March 2010)  
CZT2680  
SURFACE MOUNT  
HIGH VOLTAGE  
NPN SILICON  
SWITCHING POWER TRANSISTOR  
SOT-223 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
1) Base  
2) Collector  
3) Emitter  
4) Collector  
MARKING:  
FULL PART NUMBER  
R3 (1-March 2010)  
www.centralsemi.com  

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