CZT2907A_10 [CENTRAL]

SURFACE MOUNT PNP SILICON TRANSISTOR; 表面贴装型PNP硅晶体管
CZT2907A_10
型号: CZT2907A_10
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

SURFACE MOUNT PNP SILICON TRANSISTOR
表面贴装型PNP硅晶体管

晶体 晶体管
文件: 总2页 (文件大小:528K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CZT2907A  
www.centralsemi.com  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT2907A type is  
a PNP silicon transistor manufactured by the epitaxial  
planar process, epoxy molded in a surface mount  
package, designed for general purpose amplifier and  
switching applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
60  
60  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
600  
mA  
W
C
P
2.0  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
J, stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
10  
UNITS  
nA  
µA  
nA  
V
I
I
I
V
V
V
=50V  
CBO  
CBO  
CEV  
CB  
CB  
CE  
=50V, T =125°C  
10  
A
=30V, V =0.5V  
50  
BE  
BV  
BV  
BV  
I =10µA  
60  
60  
CBO  
CEO  
C
I =10mA  
V
C
I =10µA  
5.0  
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
0.4  
1.6  
1.3  
2.6  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =500mA, I =50mA  
V
C
B
I =150mA, I =15mA  
V
C
B
I =500mA, I =50mA  
V
C
B
h
h
h
h
h
V
=10V, I =0.1mA  
75  
100  
100  
100  
50  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
=10V, I =1.0mA  
FE  
C
=10V, I =10mA  
FE  
C
=10V, I =150mA  
300  
FE  
C
=10V, I =500mA  
FE  
C
R5 (1-March 2010)  
CZT2907A  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
MHz  
pF  
f
V
V
V
V
V
V
V
V
V
=20V, I =50mA, f=100MHz  
200  
T
CE  
CB  
BE  
CC  
CC  
CC  
CC  
CC  
CC  
C
C
=10V, I =0, f=1.0MHz  
8.0  
30  
ob  
ib  
E
C
=2.0V, I =0, f=1.0MHz  
pF  
C
t
t
t
t
t
t
=30V, V =0.5V, I =150mA, I =15mA  
45  
ns  
on  
BE B1  
C
=30V, V =0.5V, I =150mA, I =15mA  
10  
ns  
d
r
BE B1  
C
=30V, V =0.5V, I =150mA, I =15mA  
40  
ns  
BE B1  
C
=6.0V, I =150mA, I =I =15mA  
100  
80  
ns  
off  
s
C
B1 B2  
=6.0V, I =150mA, I =I =15mA  
ns  
C
B1 B2  
=6.0V, I =150mA, I =I =15mA  
30  
ns  
f
C
B1 B2  
SOT-223 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
1) Base  
2) Collector  
3) Emitter  
4) Collector  
MARKING:  
FULL PART NUMBER  
R5 (1-March 2010)  
www.centralsemi.com  

相关型号:

CZT2955

2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
CENTRAL

CZT2955

2.0W Surface Mount Complementary PNP Silicon Power Transistor
KEXIN

CZT2955BK

Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL

CZT2955BKLEADFREE

Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL

CZT2955BKPBFREE

暂无描述
CENTRAL

CZT2955LEADFREE

Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, POWER 223, PLASTIC PACKAGE-4
CENTRAL

CZT2955PBFREE

暂无描述
CENTRAL

CZT2955PNP

2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
CENTRAL

CZT2955TR

暂无描述
CENTRAL

CZT2955TR13

Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL

CZT2955TR13LEADFREE

Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL

CZT2955_10

SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS
CENTRAL