CZT3055LEADFREE [CENTRAL]

Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, POWER 223, PLASTIC PACKAGE-4;

CZT3055LEADFREE


型号：	CZT3055LEADFREE
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, POWER 223, PLASTIC PACKAGE-4 放大器光电二极管晶体管
文件：	总2页 (文件大小：598K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CZT2955 PNP

CZT3055 NPN

www.centralsemi.com

SURFACE MOUNT

COMPLEMENTARY

SILICON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT2955 and

CZT3055 types are surface mount epoxy molded

complementary silicon transistors manufactured by the

epitaxial base process, designed for surface mounted

power amplifier applications up to 6.0 amps.

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

A

Collector-Base Voltage

V

V

V

V

100

70

V

V

CBO

CER

CEO

EBO

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

60

V

7.0

V

Continuous Collector Current

Continuous Base Current

Power Dissipation

I

6.0

A

C

I

3.0

A

B

P

2.0

W

°C

°C/W

D

T

Operating and Storage Junction Temperature

Thermal Resistance

T

-65 to +150

62.5

J, stg

Θ

JA

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

A

SYMBOL

TEST CONDITIONS

MIN

MAX

700

1.0

UNITS

μA

mA

mA

V

I

I

I

V

V

V

=30V

CEO

CEV

EBO

CE

CE

EB

=100V, V =1.5V

EB

=7.0V

5.0

BV

I =30mA, R =100Ω

70

60

CER

CEO

C

BE

BV

I =30mA

V

C

V

V

I =4.0A, I =400mA

1.1

1.5

70

V

CE(SAT)

BE(ON)

FE

C

B

V

=4.0V, I =4.0A

V

CE

CE

CE

CE

C

h

h

V

V

V

=4.0V, I =4.0A

20

5.0

2.5

C

=4.0V, I =6.0A

FE

C

f

=10V, I =500mA, f=1.0MHz

MHz

T

C

R4 (1-March 2010)

CZT2955 PNP

CZT3055 NPN

SURFACE MOUNT

COMPLEMENTARY

SILICON POWER TRANSISTORS

SOT-223 CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Base

2) Collector

3) Emitter

4) Collector

MARKING:

FULL PART NUMBER

R4 (1-March 2010)

www.centralsemi.com

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