CZT751BK [CENTRAL]
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4;
| 型号： | CZT751BK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CZT751
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT751 type is a
PNP Silicon Transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for high current applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
80
60
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
5.0
V
Continuous Collector Current
Power Dissipation
I
2.0
A
C
P
2.0
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
°C/W
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
UNITS
I
I
V
V
=80V
nA
nA
V
CBO
EBO
CB
EB
=4.0V
100
BV
BV
BV
I =100µA
80
60
CBO
CEO
C
I =10mA
V
C
I =10µA
5.0
V
EBO
E
V
V
V
V
I =1.0A, I =100mA
0.3
0.5
1.2
1.0
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
C
B
I =2.0A, I =200mA
V
C
B
I =1.0A, I =100mA
V
C
B
V
=2.0V, I =1.0A
V
CE
CE
CE
CE
CE
CE
C
h
h
h
h
V
V
V
V
V
=2.0V, I =50mA
75
75
75
40
75
C
=2.0V, I =500mA
FE
C
=2.0V, I =1.0A
FE
C
=2.0V, I =2.0A
FE
C
f
=5.0V, I =50mA, f=100MHz
MHz
T
C
R4 (1-March 2010)
CZT751
SURFACE MOUNT
HIGH CURRENT
PNP SILICON TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R4 (1-March 2010)
www.centralsemi.com
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