CZTA44HCBK [CENTRAL]
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4;
| 型号： | CZTA44HCBK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4 晶体 晶体管 高压 |
| 文件： | 总2页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Ce n t r a l
S e m ic o n d u c t o r Co r p .
CZTA44
NPN SILICON EXTREMELY
HIGH VOLTAGE TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA44
type is a surface mount epoxy molded silicon
planar epitaxial transistors designed for
extremely high voltage applications.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
I
450
400
6.0
300
2.0
V
V
V
mA
W
CBO
CEO
EBO
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
J stg
JA
-65 to +150
62.5
C
o
Θ
C/W
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
500
100
UNITS
I
I
I
V
V
V
=400V
=400V
=4.0V
nA
nA
nA
V
V
V
V
V
V
V
CBO
CES
EBO
CB
CE
BE
BV
BV
BV
BV
V
V
V
V
I =100µA
450
450
400
6.0
CBO
CES
CEO
EBO
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
C
I =100µA
C
I =1.0mA
C
I =10µA
E
I =1.0mA, I =0.1mA
0.40
0.50
0.75
0.75
C
B
B
B
B
I =10mA, I =1.0mA
C
I =50mA, I =5.0mA
C
I =10mA, I =1.0mA
V
C
h
h
h
V
V
=10V, I =1.0mA
=10V, I =10mA
C
40
50
45
FE
FE
CE
CE
C
200
VCE=10V, I =50mA
FE
C
322
SYMBOL
TEST CONDITIONS
MIN
20
20
MAX
UNITS
h
f
C
C
V
V
V
V
=10V, I =100mA
C
FE
T
ob
CE
CE
CB
EB
=10V, I =10mA, f=10MHz
C
MHz
pF
pF
=20V, I =0, f=1.0MHz
E
=0.5V, I =0, f=1.0MHz
C
7.0
130
ib
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
R2
323
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