CZTA96BK [CENTRAL]
Power Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4;
| 型号： | CZTA96BK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4 |
| 文件： | 总2页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CZTA96
www.centralsemi.com
SURFACE MOUNT
EXTREMELY HIGH VOLTAGE
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA96 type is
a surface mount epoxy molded PNP silicon planar
epitaxial transistors designed for extremely high voltage
applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
V
V
V
450
450
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
6.0
V
Continuous Collector Current
Power Dissipation
I
500
mA
W
C
P
D
2.0
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
J, stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
V
V
=400V
=4.0V
100
100
nA
nA
V
CBO
EBO
CB
BE
BV
BV
BV
I =100µA
450
450
6.0
500
490
9.7
CBO
CEO
C
I =1.0mA
V
C
I =10µA
V
EBO
E
V
V
V
V
I =1.0mA, I =0.1mA
0.20
0.30
0.50
1.0
V
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
FE
C
B
I =10mA, I =1.0mA
V
C
B
I =50mA, I =5.0mA
0.15
V
C
B
I =10mA, I =1.0mA
V
C
B
C
h
h
h
h
V
=10V, I =1.0mA
40
50
45
25
20
CE
CE
CE
CE
CE
CB
EB
V
V
V
V
V
V
=10V, I =10mA
120
35
200
FE
C
=10V, I =50mA
FE
C
=10V, I =100mA
FE
C
f
=10V, I =10mA, f=10MHz
MHz
pF
T
C
C
=20V, I =0, f=1.0MHz
7.0
ob
ib
E
C
=0.5V, I =0, f=1.0MHz
130
pF
C
R4 (1-March 2010)
CZTA96
SURFACE MOUNT
EXTREMELY HIGH VOLTAGE
PNP SILICON TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R4 (1-March 2010)
www.centralsemi.com
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