CEC8218 [CET]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管
| 型号： | CEC8218 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEC8218
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
D
D
20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V.
RDS(ON) = 34mΩ @VGS = 2.5V.
*1K
*1K
Super High dense cell design for extremely low RDS(ON)
.
G1
G2
High power and current handing capability.
Lead free product is acquired.
S1
S2
*Typical value by design
D
D
D
D
8
7
6
5
Bottom View
1
2
3
4
DFN3*3
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
VDS
VGS
ID
Limit
Units
Drain-Source Voltage
20
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
±12
6.5
IDM
25
Maximum Power Dissipation
PD
1.5
W
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient b
RθJA
83
C/W
Rev 1. 2010.July
Details are subject to change without notice .
http://www.cetsemi.com
1
CEC8218
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
µA
µA
µA
IGSSF
IGSSR
10
-10
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4A
0.5
1.2
23
34
V
17
24
mΩ
mΩ
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Switching Characteristics d
Turn-On Delay Time
gFS
VDS = 10V, ID = 5A
17
S
td(on)
tr
td(off)
tf
0.34
0.86
3.60
2
0.68
1.72
7.5
4
µs
µs
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
µs
Turn-Off Fall Time
µs
Total Gate Charge
Qg
4.2
1.2
2.5
5.6
nC
nC
nC
VDS = 10V, ID = 5A,
VGS = 4.5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
6.5
1.2
A
V
VSD
VGS = 0V, IS = 1.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEC8218
25
20
15
10
20
16
12
8
VGS=4.5,4,3V
VGS=2.5V
25 C
VGS=2.0
V
4
5
0
-55 C
TJ=125 C
0.5
0
0.0
1.0
1.5
2.0
2.5
0
1
2
3
4
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
ID=5A
VGS=4.5V
V
GS=0V
101
100
10-1
-100
-50
0
50
100
150
200
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage (V)
TJ, Junction Temperature( C)
Figure 4. Body Diode Forward Voltage
Variation with Source Current
Figure 3. On-Resistance Variation
with Temperature
102
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
RDS(ON)Limit
1ms
10ms
100ms
1s
DC
101
100
10-1
10-2
TA=25 C
TJ=150 C
Single Pulse
10-2
10-1
100
101
102
-50 -25
0
25 50 75 100 125 150
VDS, Drain-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 6. Maximum Safe
Operating Area
Figure 5. Gate Threshold Variation
with Temperature
3
CEC8218
5
4
3
2
1
0
VDS=10V
ID=5A
on
t
toff
d(off)
t
r
t
d(on)
OUT
t
f
t
90%
10%
90%
V
10%
INVERTED
90%
50%
50%
IN
V
10%
PULSE WIDTH
0
1
2
3
4
5
6
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
Figure 8. Switching Waveforms
VDD
RL
VIN
D
OUT
V
VGS
RGEN
G
S
Figure 9. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
0.05
0.02
PDM
t1
t2
0.01
10-2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
101
102
Square Wave Pulse Duration (sec)
Figure 10. Normalized Thermal Transient Impedance Curve
4
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