CEU50N06 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEU50N06 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：381K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CED50N06/CEU50N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 36A , RDS(ON) = 18mΩ(typ) @VGS = 10V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
60
Gate-Source Voltage
±20
36
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
105
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
68
W
PD
0.45
-55 to 175
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
2.2
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
50
Rev 1. 2006.Oct
Details are subject to change without notice .
http://www.cetsemi.com
6 - 66
CED50N06/CEU50N06
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 15A
2
4
V
Static Drain-Source
18
23
mΩ
On-Resistance
Dynamic Characteristics c
Forward Transconductance
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 15A
15
1278
430
80
S
Input Capacitance
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
21
13
40
9
45
33
80
27
40
ns
ns
VDD = 30V, ID = 36A,
VGS = 10V, RGEN = 3.6Ω
Turn-Off Delay Time
Turn-Off Fall Time
ns
ns
Total Gate Charge
Qg
31
8
nC
nC
nC
VDS = 48V, ID = 36A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
13
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
35
A
V
VSD
VGS = 0V, IS = 15A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6 - 67
CED50N06/CEU50N06
120
100
80
60
40
20
0
125
V
GS=10V
25 C
V
V
V
GS=8V
100
75
50
25
0
GS=7V
GS=6V
V
GS=5V
GS=4V
-55 C
TJ=125 C
2
V
0
1
2
3
4
5
6
0
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1800
1500
1200
900
600
300
0
ID=15A
VGS=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
6 - 68
CED50N06/CEU50N06
103
15
12
9
VDS=48V
ID=36A
102
RDS(ON)Limit
100ms
1ms
10ms
101
DC
6
100
6
3
TC=25 C
TJ=175 C
Single Pulse
10-1
0
10-2
10-1
100
101
102
0
10
20
30
40
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
PDM
10-1
0.1
t1
t2
0.05
0.02
0.01
1. Rθ JC (t)=r (t) * Rθ JC
2. Rθ JC=See Datasheet
3. TJM-TC = P* Rθ JC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
6 - 69
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