CMT2301M233 [CHAMP]
P-CHANNEL ENHANCEMENT MODE MOSFET; P沟道增强型MOSFET
| 型号： | CMT2301M233 |
| 厂家： | 
CHAMPION MICROELECTRONIC CORP. |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
GENERAL DESCRIPTION
FEATURES
The CMT2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
-20V/-2.3A ,RDS(ON)=130 mΩ@VGS=-4.5V
-20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
This high density process is especially tailored to minimize
on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook computer
power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline
surface mount package.
SOT-23-3 package design
APPLICATIONS
Power Management in Notebook
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION
SYMBOL
SOT-23-3
Top View
D
3
G
S
2
1
P-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
SOT-23-3
SOT-23-3
CMT2301M233
CMT2301GM233*
*Note: G : Suffix for Pb Free Product
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 1
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain- to- Source Voltage
Symbol
VDSS
Value
-20
Unit
V
Gate-to-Source Voltage
VGSS
±8
V
TA=25℃
TA=70℃
-2.5
-1.5
-10
Continuous Drain Current(TJ=150℃)
ID
A
Pulsed Drain Current
IDM
IS
A
A
Continuous Source Current(Diode Conduction)
-1.6
1.25
0.8
TA=25℃
TA=70℃
Power Dissipation
PD
W
Operating Junction Temperature
Storage Temperature Range
TJ
150
℃
℃
TSTG
RθJA
-55/150
120
Thermal Resistance-Junction to Ambient
℃/W
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT2301
Characteristic
Symbol
Min
-20
Typ
Max
Units
Static
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = -250μA)
Gate Threshold Voltage
V(BR)DSS
VGS(th)
IGSS
V
V
-0.45
-1.5
(VDS = VGS, ID = -250μA)
Gate Leakage Current
±100
nA
(VDS =0 V, VGS = ±8 V)
Zero Gate Voltage Drain Current
(VDS = -20 V, VGS = 0 V)
IDSS
-1
μA
(VDS = -20 V, VGS = 0 V, TJ = 55℃)
On-State Drain Current
-10
(VDS ≤-5 V, VGS = -4.5V)
(VDS ≤-5 V, VGS = -2.5V)
Drain-Source On-Resistance
(VGS = -4.5 V, ID = -2.8A)
ID(on)
-6
-3
A
RDS(on)
0.105
0.145
6.5
0.13
0.19
ꢀ
(VGS = -2.5 V, ID = -2.0A)
Forward Transconductance (VDS = -5 V, ID = -2.8V)
Diode Forward Voltage (IS=-1.6A,VGS=0V)
Dynamic
gFS
S
V
VSD
-0.8
-1.2
Input Capacitance
Ciss
Coss
Crss
td(on)
tr
415
223
87
(VDS = -6 V, VGS =-0V,
pF
ns
Output Capacitance
f = 1.0 MHz)
Reverse Transfer Capacitance
13
25
60
70
60
10
Turn-On Time
Turn-Off Time
(VDD = -6 V,RL=6ꢀ
ID = -1.0 A,VGEN = -4.5 V,
RG = 6ꢀ)
36
td(off)
tf
42
34
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
5.8
0.85
1.7
(VDS = -6 V, ID = -2.8 A,
VGS =-4.5V)
nC
Qgs
Qgd
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 2
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 3
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 4
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 5
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
PACKAGE DIMENSION
SOT-23-3
D
3
b1
With Plating
A
A1
A2
b
b
Base Metal
b1
c
Section B-B
c1
D
E
E1
L
1
2
e
b
L1
e
e1
e1
θ
θ1
θ2
L
See Section B-B
L1
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 6
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
TEL: +886-3-567 9979
FAX: +886-3-567 9909
TEL: +886-2-2788 0558
FAX: +886-2-2788 2985
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 7
相关型号：
©2020 ICPDF网 联系我们和版权申明