CMT35N03G [CHAMP]
25V N-CHANNEL ENHANCEMENT-MODE MOSFET; 25V n沟道增强型MOSFET
| 型号： | CMT35N03G |
| 厂家： | 
CHAMPION MICROELECTRONIC CORP. |
| 描述： | 25V N-CHANNEL ENHANCEMENT-MODE MOSFET |
| 文件： | 总6页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMT35N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
APPLICATION
FEATURES
Vds=25V
Advanced trench process technology
R
DS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A
DS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
R
PIN CONFIGURATION
SYMBOL
TO-252
Front View
D
G
S
2
3
1
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics
(TA=25℃ unless otherwise notes)
Rating
Symbol
VDS
Value
Unit
V
Drain - Source Voltage
25
±20
30
Gate -Source Voltage
VGS
V
Continuous Drain Current
ID
A
1)
Pulsed Drain Current
IDM
260
60
A
Maximum Power Dissipation
TA=25℃
TA=75℃
PD
W
PD
23
W
Operating Junction and Storage Temperature Range
Junction – to –Case Thermal Resistance
TJ / TSTG
-55 to150
1.8
℃
R
℃/W
℃/W
θJC
θJA
2)
Junction – to Ambient Thermal Resistance (PCB mount)
R
50
Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design ; not subject to production testing
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 1
CMT35N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
ORDERING INFORMATION
Part Number
Package
CMT35N03GN252
TO-252
ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise notes)
Symbol
Static
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
Drain-Source On-State Resistancem
VGS=0V, ID=-250uA
VGS=4.5V, ID=30A
25
-
-
-
V
9.5
13.0
mꢀ
RDS(ON)
VGS=10V, ID=30A
-
6.5
9.0
mꢀ
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=15V, ID=15A
VDS=25V, VGS=0V
1
-
1.8
12
-
3
-
V
Forward Transconductance
Zero Gate Voltage Drain Current
S
IDSS
-
1
uA
IGSS
Gate-Source Forward Leakage
-
-
nA
±
100
V
GS
=±20V , VDS=0V
Dynamic3)
Qg
Total Gate Charge
ID=35A
-
-
-
-
10
3.5
3
25
10
65
-
nC
nC
nC
ns
VDS=15V
VGS=10V
Qgs
Qgd
td(on)
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
VDD=15V
ID=1A
12
tr
Rise Time
-
-
-
-
-
-
4
32
-
-
-
-
-
-
ns
ns
ns
pF
pF
pF
RG=6ꢀ
td(off)
tf
Turn-off Delay Time
Fall Time
RL=15ꢀ
6
VGEN=10V
VGS=0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1180
270
145
VDS=15V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
IS=20A, VGS=0V
Min.
-
Typ. Max. Units
VSD
Diode Forward Voltage
0.87
-
1.5
20
V
Max. Diode Forward Current
-
A
Is
Notes:
Pulse test : Pulse width <300us , duty cycle <2%.
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 2
CMT35N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
TYPICAL CHARACTERISTICS
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 3
CMT35N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 4
CMT35N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
PACKAGE DIMENSION
TO-252
C
B
R
PIN 1: GATE
PIN 2: DRAIN
E
PIN 3: SOURCE
4
1
2
3
L
J
D
H
G
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 5
CMT35N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
TEL: +886-3-567 9979
FAX: +886-3-567 9909
TEL: +886-2-2788 0558
FAX: +886-2-2788 2985
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 6
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