RL251 [MDD]
GENERAL PURPOSE SILICON RECTIFIER; 通用硅整流
| 型号： | RL251 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | GENERAL PURPOSE SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RL251 THRU RL257
ENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current -2.5 Amperes
FEATURES
R-3
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
φ 0.160( 4.1 )
φ0.138 ( 3.5 )
molded plastic technique
0.042(1.1)
0.040(1.0)
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
0.160(4.1)
0.138(3.5)
Case: JEDEC R-3 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Min.1.0 ( 25.4 )
Min.1.0 ( 25.4 )
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight:0.012 ounce, 0.58 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
RL
256
RL
257
RL
251
RL
252
RL
253
RL
254
RL
255
SYMBOLS
MDD Catalog
UNITS
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
200 400
140 280
200 400
600
420
600
800 1000 VOLTS
560 700
VOLTS
VRRM
VRMS
VDC
100
800 1000 VOLTS
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=75 C
Peak forward surge current
I(AV)
2.5
Amps
IFSM
150.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
VF
IR
1.1
Maximum instantaneous forward voltage at 2.5A
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
5.0
50.0
µ
A
TA=100 C
Typical junction capacitance (NOTE 1)
CJ
RθJA
pF
C/W
C
35.0
35.0
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
TJ,TSTG
-50 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES RL251 THRU RL257
FIG. 1 -- TYPICAL FORWARD CHARACTERISTIC
FIG. 2 -- PEAK FORWARD SURGE CURRENT
20
200
150
4.0
Tj = 125
Tj = 25
Pulse Width = 300 S
8.3 ms Single
Half Sing -Wave
1.0
0.4
100
50
0
0.1
0.04
0
1.0
2.0
10
20
40 80 100
NUMBER OF CYCLES AT 60HZ
0.6
0.8
1.0
1.2
INSTANTANEOUS FORWARD VOLTAGE / VOLTS
Fig.5-TYPICAL REVERSE CHARACTERISTICS
FIG. 3 -- FORWARD CURRENT DERATING CURVE
10
4
3
Single Phase Half Wave 60HZ
Resistive or Inductive Load
2.0
1
1
0.4
0
0
25
50
75
100
125
150
175
200
0.1
0.04
0.01
AMBIENT TEMPERATURE /
0
25
50
75
100
125
Fig.4-Typical Junction Capacitance
200
100
TJ=25
f =1. 0MHZ
Vsi g=50mVp- p
10
1
0.1
1
10
100
20
40
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