S2MW [MDD]

SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER;
S2MW
型号: S2MW
厂家: Chendahang Electronics Co., Ltd    Chendahang Electronics Co., Ltd
描述:

SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER

文件: 总3页 (文件大小:724K)
中文:  中文翻译
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S2AW THRU S2MW  
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere  
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER  
SOD-123FL  
Features  
Glass passivated device  
0.075(1.90)  
0.067(1.70)  
0.031 (0.08)  
0.043 (1.10)  
Ideal for surface mouted applications  
Low reverse leakage  
Metallurgically bonded construction  
High temperature soldering guaranteed:  
250°C/10 seconds,0.375”(9.5mm) lead length, 5  
lbs. (2.3kg) tension  
0.114(2.90)  
0.102(2.60)  
0.043(1.10)  
0.035(0.90)  
0.008(0.20)  
0.005(0.12)  
0.035(0.90)  
0.028(0.70)  
0.154(3.90)  
0.141(3.60)  
Mechanical Data  
Cas e : JEDEC SOD-123FL molded plastic body  
Terminals : Solderable per MIL-STD-750,Method 2026  
Polarity : Polarity symbol marking on body  
Mounting Pos ition : Any  
Dimensions in inches and (millimeters)  
Weight  
: 0.0007 ounce, 0.02 grams  
Maximum Ratings And Electrical Characteristics  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
S2AW S2BW S2DW S2GW S2JW  
S2KW S2MW  
Parameter  
SYMBOLS  
UNITS  
MDD  
2D1  
MDD  
2D2  
MDD  
2D3  
MDD  
2D4  
MDD  
2D5  
MDD  
2D6  
MDD  
2D7  
Marking Code  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
RMM  
RMS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
100  
1000  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
at TL(see fig.1)  
I
(AV)  
2.0  
A
Peak forward surge current  
50  
I
FSM  
8.3ms single half sine-wave  
A
V
superimposed onrated load (JEDEC Method)  
Maximum instantaneous forward voltage at 2.0A  
V
F
1.1  
10  
50  
Maximum DCreverse current  
at rated DCblocking voltage  
T
A
=25  
I
R
mA  
pF  
TA=125  
30  
Typical junction capacitance (NOTE 1)  
Typical thermal resistance (NOTE 2)  
Operating junction temperature range  
C
J
90.0  
℃/  
W
R
JA  
J
-55 to +125  
-55 to +150  
T
Storage temperature range  
T
STG  
Note: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.  
2.P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
.
3 The typical data above is for reference only.  
DN:T19705A0  
https://www.microdiode.com  
Rev:2019A0  
Page :1  
S2AW THRU S2MW  
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere  
Typical Characterisitics  
Fig.2 Typical Instaneous Reverse  
Characteristics  
Fig.1 Forward Current Derating Curve  
100  
2.5  
2.0  
TJ=150°C  
100LFM  
TJ=125°C  
10  
TJ=100°C  
1.5  
1.0  
1.0  
TJ=75°C  
TJ=50°C  
0.1  
0.5  
0.0  
Single phase half-wave 60 Hz  
resistive or inductive load  
TJ=25°C  
0.01  
25  
50  
75  
100  
125  
150  
175  
0
200  
400  
600  
800  
Ambient Temperature (°C)  
Instaneous Reverse Voltage (V)  
Fig.3 Typical Forward Characteristic  
Fig.4 Typical Junction Capacitance  
2.0  
1.5  
100  
10  
1
TJ=25°C  
1.0  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0.1  
1.0  
10  
100  
Reverse Voltage (V)  
Instaneous Forward Voltage (V)  
Fig.6 Maximum Non-Repetitive Peak  
Forward Surge Current  
60  
50  
40  
30  
20  
10  
00  
8.3 ms Single Half Sine Wave  
(JEDEC Method)  
1
10  
100  
Number of Cycles  
The curve above is for reference only.  
https://www.microdiode.com  
Rev:2019A0  
Page :2  
S2AW THRU S2MW  
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere  
Packing information  
unit:mm  
P0  
P1  
d
Symbol  
Item  
Tolerance  
SOD-123FL  
E
F
Carrier width  
A
0.1  
0.1  
0.1  
0.05  
2.0  
min  
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.3  
1.0  
2.1  
4.0  
W
Carrier length  
B
B
Carrier depth  
C
1.60  
1.55  
178.00  
50.0  
13.00  
1.75  
3.50  
4.00  
4.00  
2.00  
Sprocket hole  
d
7" Reel outside diameter  
7" Reel inner diameter  
Feed hole diameter  
Sprocket hole position  
Punch hole position  
Punch hole pitch  
Sprocket hole pitch  
Embossment center  
Overall tape thickness  
Tape width  
D
A
P
D1  
D2  
E
F
D2  
D1  
P
T
P0  
P1  
T
C
0.25  
8.15  
W1  
D
W
W1  
Reel width  
10.5  
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.  
Reel packing  
APPROX.  
GROSS WEIGHT  
COMPONENT  
SPACING  
INNER  
BOX  
(m/m)  
REEL  
DIA,  
(m/m)  
CARTON  
SIZE  
(m/m)  
BOX  
(pcs)  
CARTON  
(pcs)  
REEL  
(pcs)  
PACKAGE  
REEL SIZE  
(kg)  
(m/m)  
4.0  
SOD-123FL  
7"  
3,000  
178  
9.0  
45,000 210*208*203  
430*430*235  
180,000  
Suggested Pad Layout  
Symbol  
Unit (mm)  
Unit (inch)  
0.047  
A
B
C
D
E
1.2  
0.047  
1.2  
3.2  
2
0.126  
0.079  
4.4  
0.173  
Important Notice and Disclaimer  
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and  
specifications at any time without notice. Customers should obtain and confirm the latest product information and  
specifications before final design,purchase or use.  
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application  
assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with  
products which are purchased or used for any unintended or unauthorized application.  
No license is granted by implication or otherwise under any intellectual property rights of Microdiode  
Electronics (Jiangsu).  
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support  
devices or systems without express written approval of Microdiode Electronics (Jiangsu).  
https://www.microdiode.com  
Rev:2019A0  
Page :3  

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