SF53-TB [CHENG-YI]
Rectifier Diode, 1 Element, 5A, 150V V(RRM);
| 型号： | SF53-TB |
| 厂家： | 
CHENG-YI ELECTRONIC CO., LTD. |
| 描述： | Rectifier Diode, 1 Element, 5A, 150V V(RRM) 二极管 |
| 文件： | 总2页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF51 thru SF56
SSUUPPEERR FFAASSTT RREECCTTIIFFIIEERR
CCHHEENNGG--YYII
ELECTRONIC
SUPER FAST RECTIFIER
VOLTAGE RANGE-50 to 400 Volts
CURRENT-5.0 Amperese
FEATURES
.052(1.3)
1.0(25.4)
MIN.
DIA.
High reliability
.048(1.2)
Low leakage
Low forward voltage
High current capability
Super fast switching speed
High surge capability
Good for switching mode circuit
.375(9.5)
.335(8.5)
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MECHANICAL DATA
MIN.
Case:Molded plastic
Epoxy:UL94V-0 rate flame retardant
Lead:MIL-STD-202E method 208C quaranted
Mounting position:Any
Weigh:1.18 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0
Ratings at 25 C ambient temperature unless otherwise specified.
Signle phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0
MAXIMUM RATINGS ( At TA=25 C unless otherwise noted)
SF51
50
SF52
100
70
SF53
150
105
150
SF54
200
140
200
SF55
300
210
300
SF56
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
UNITS
Volts
VRRM
400
280
400
VRMS
35
Volts
Maximum DC Blocking Voltage
VDC
50
100
Volts
Maximum Average Forward Rectified Current
5.0
Amps
IO
0
.375" (9.5mm) lead length
@TA=55 C
Peak Forward Surge Current, 8.3 ms single half
Amps
150
IFSM
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
50
30
CJ
pF
0
Operating and Storage Temperature Range
-65 to +150
TJ TSTG
C
0
ELECTRICAL CHARACTERISTICS ( At TA=25 C unless otherwise noted)
SF51
SF52
SF53
SF54
SF55
SF56
CHARACTERISTICS
SYMBOL
UNITS
Volts
0.95
1.25
Maximum Instantaneous Forward Voltage at 5.0A DC
VF
0
uAmps
uAmps
5.0
150
35
@T
@T
Maximum Reverse Recovery Time (Note1)
A
=25 C
Maximum DC Reverse Current at
IR
0
Rated DC Blocking Voltage
A=150 C
trr
nSec
Notes : 1.Test Condition: IF=0.5A, IR=1.0A, IRR=0.25A
2.Measured at 1 MHz and applied reverse voltage of 4.0 volts
SF51 thru SF56
SSUUPPEERR FFAASSTT RREECCTTIIFFIIEERR
CCHHEENNGG--YYII
ELECTRONIC
RATING AND CHARACTERISTICS CURVES
SF51 THRU SF56
Fig.1 - TEST CIRCUIT DIAGRAM AND REVERSE
Fig. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
t
rr
+0.5A
6.0
SINGLE PHASE
HALF WAVE
(-)
5.0
(+)
60Hz
D.U.T.
0
RESISTIVE OR
PULSE
GENERATOR
(NOTE 2)
4.0
25 Vdc
INOUCTIVE LOAD
-0.25
(approx.)
3.0
1
2.0
1.0
(-)
OSCILLOSCOPE
(NOTE 1)
NON-
(+)
INDUCTIVE
-1.0A
1cm
0
0 25 50 75 100 125 150 175
NOTES : 1. Rise Time=7ns max., Input Impedance=
1 megohm, 22pF.
SET TIME BASE
FOR 10 /20 ns/cm
0
AMBIENT TEMPERATURE, C
2. Rise Time=10ns max., Source Impedance=
50 ohms.
Fig.3 - TYPICAL REVERSE
CHARACTERISTICS
Fig. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
100
0
= 25 C
100
T
J
0
T =150C
J
10.0
10
0
T =100C
J
1.0
1.0
0
T =25C
J
.1
0.1
Pulse Width-300
1% DUTY CYCLE
s
.01
.01
20
40 60
80 100 120 140
.6
.2
.4
.8 1.0
1.2 1.4
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.5 -MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
Fig.6 - TYPICAL JUNCTION CAPACITANCE
175
150
125
100
200
8.3ms Single Half Sine Wave
JEDEC Method
100
60
40
20
75
50
10
0
= 25 C
T
J
6
4
25
0
2
1
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60 Hz
.1 .2 .4
1.0
2
4
10
20 40 100
REVERSE VOLTAGE, (V)
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