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2SA1577PT

更新时间：2024-09-18 07:58:26
品牌：CHENMKO
描述：Medium Power PNP Transistor

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2SA1577PT 概述

Medium Power PNP Transistor 中功率PNP晶体管

2SA1577PT 数据手册

通过下载2SA1577PT数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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CHENMKO ENTERPRISE CO.,LTD  
2SA1577PT  
SURFACE MOUNT  
Medium Power PNP Transistor  
VOLTAGE 32 Volts CURRENT 0.5 Ampere  
APPLICATION  
* Medium Power Amplifier .  
FEATURE  
* Surface mount package. (SC-70/SOT-323)  
* Low saturation voltage V  
SC-70/SOT-323  
* Low cob. Cob=7.0pF(TypC.)E(sat)=-0.4V(max.)(IC=-100mA)  
* PC= 200mW (mounted on ceramic substrate).  
* High saturation current capability.  
0.65  
0.65  
1.3±0.1  
2.0±0.2  
CONSTRUCTION  
* PNP Silicon Transistor  
* Epitaxial planner type  
0.3±0.1  
1.25±0.1  
MARKING  
* HFE(P):UE  
* HFE(Q):PC  
0.8~1.1  
* HFE(R):RB  
0.05~0.2  
0~0.1  
0.1Min.  
(3)C  
2.0~2.45  
CIRCUIT  
(1)  
B
(2)E  
SC-70/SOT-323  
Dimensions in millimeters  
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )  
RATINGS  
CONDITION  
Open Emitter  
SYMBOL  
VCBO  
MIN.  
-
MAX.  
-40  
UNITS  
Volts  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current DC  
Open Base  
VCEO  
VEBO  
IC  
--  
-32  
-5  
Volts  
Volts  
mAmps  
mAmps  
mAmps  
mW  
Open Collector  
-
-
-500  
-500  
-10  
Peak Collector Current  
Peak Base Current  
ICM  
-
-
IBM  
Total Power Dissipation  
Storage Temperature  
Junction Temperature  
Operating Ambient Temperature  
TA ≤ 25OC; Note 1  
PTOT  
TSTG  
TJ  
-
200  
-55  
-
+150  
+150  
+150  
oC  
oC  
TAMB  
-55  
oC  
Note  
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.  
2. Measured at Pulse Width 300 us, Duty Cycle 2%.  
2002-10  
RATING CHARACTERISTICS ( 2SA1577PT )  
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
PARAMETERS  
Collector Cut-off Current  
CONDITION  
SYMBOL  
ICBO  
MIN.  
-
TYPE  
-
MAX.  
-1.0  
UNITS  
uA  
IE=0; VCB=-20V  
Emitter Cut-off Current  
DC Current Gain  
IC=0; VEB=-4V  
ICEO  
-
-
-
-1.0  
390  
uA  
VCE=-3V; Note 1  
IC=-10mA; Note 2  
hFE  
82  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturatio Voltage  
Output Collector Capacitance  
Transition Frequency  
IC=-100mA; IB=-10mA  
IC=-100mA; IB=-10mA  
VCEsat  
VBEsat  
Cob  
-
-
-
-
-
-
-0.4  
Volts  
mVolts  
pF  
-1.1  
IE=ie=0; VCB=-10V;  
f=1MHz  
7
-
-
IC=2mA; VCE=-10V;  
f=100MHz  
fT  
200  
MHz  
Note :  
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.  
2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390  
RATING CHARACTERISTIC CURVES ( 2SA1577PT )  
Fig.2 Grounded emitter output  
characteristics (1)  
Fig.3 Grounded emitter output  
characteristics (2)  
Fig.1 Grounded emitter propagation  
characteristics  
-1000  
-100  
-500  
-400  
-300  
-200  
-100  
0
Ta=  
25OC  
Ta=  
25OC  
V
CE=-3V  
-500  
-200  
-100  
-50  
-5.0mA  
-4.5mA  
-4.0mA  
-3.5mA  
-3.0mA  
-2.5mA  
-80  
Ta=100OC  
25OC  
-60  
-40  
-20  
-10  
-5  
- 55OC  
-2.0mA  
-1.5mA  
-2  
-1  
-1.0mA  
-0.5mA  
0A  
-20  
0
-0.5  
-0.10mA  
IB=0A  
-0.2  
-0.1  
IB  
=
0
-1  
-2  
-3  
-4  
-5  
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8  
BASE TO EMITTER VOLTAGE : VBE  
-0  
-5  
-10  
COLLECTOR TO EMITTER VOLTAGE : VCE  
(
V)  
(
V)  
COLLECTOR TO EMITTER VOLTAGE : VCE  
(V)  
RATING CHARACTERISTIC CURVES ( 2SA1577PT )  
Fig.4 Collector-emitter saturation  
voltage vs. collector current  
Fig.5 Collector-emitter saturation  
voltage vs. collector current  
Fig.6 DC current gain vs.  
collector current  
-1  
-1  
1000  
500  
Ta=  
25OC  
Ta=25OC  
lC/lB=10  
-0.5  
-0.5  
200  
100  
50  
-0.2  
-0.1  
-0.2  
-0.1  
lC  
/l  
B
=
50  
Ta  
=
100OC  
25OC  
-55OC  
20  
10  
-0.05  
-0.05  
20  
10  
-0.02  
-0.5 -1 -2  
-0.02  
-0.5 -1 -2  
-0.1  
-0.5 -1.0  
-5 -10  
-50 -100  
-1000  
-5 -10  
-50 -100  
-500  
-5 -10  
-50 -100  
-500  
COLLECTOR CURRENT : I  
C(mA)  
COLLECTOR CURRENT : I (mA)  
C
COLLECTOR CURRENT : I (mA)  
C
Fig.8 Gain bandwidth product  
vs. emitter current  
Fig.7 DC current gain vs.  
collector current  
Fig.9 Collector output capacitance vs.  
collector-base voltage  
Emitter input capacitance vs.  
emitter-base voltage  
100  
1000  
500  
Ta 25OC  
=
V
CE=  
-3V  
Ta 25OC  
=
VCE -5V  
=
f
I
I
1MHz  
=
1000  
500  
E
0A  
0A  
=
50  
20  
C
=
200  
100  
50  
200  
100  
10  
5
50  
20  
10  
2
-0.5  
-0.1  
-0.5 -1  
-5 -10  
-50 -100  
-1000  
0.5  
1
2
5
10  
20  
50  
-1  
-2  
-5  
-10  
-20  
-50  
V)  
EMITTER CURRENT : IE mA)  
COLLECTOR CURRENT : I  
C(  
mA)  
COLLECTOR TO BASE VOLTAGE : VCB  
EMITTER TO BASE VOLTAGE : VEB  
(
(
(
V)  

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