2SD1781KPTQGP [CHENMKO]
Transistor,;
| 型号： | 2SD1781KPTQGP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总4页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
2SD1781KPT
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 32 Volts CURRENT 0.8 Ampere
APPLICATION
* Telephone and proferssional communction equipment.
* Other switching applications.
FEATURE
SOT-23
* Small surface mounting type. (SOT-23)
* Corrector peak current (Max.=1500mA).
* Suitable for high packing density.
* Low voltage (Max.=32V) .
* High saturation current capability.
* Voltage controlled small signal switch.
(1)
(2)
(3)
CONSTRUCTION
* NPN Switching Transistor
MARKING
(
)
(
)
.055 1.40
.028 0.70
(
)
(
)
.047 1.20
.020 0.50
* HFE(Q):D9C-
* HFE(R):NU
(
)
.103 2.64
.086 (2.20)
(
)
.045 1.15
(3)
(2)
C
E
CIRCUIT
(
)
.033 0.85
(1)
B
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
UNIT
−
−
−
−
−
40
32
5
V
V
V
A
A
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current DC
peak collector current
open base
open collector
0.8
1.5
ICM
Ptot
200
mW
total power dissipation
Tamb ≤ 25 °C; note 1
−
Tstg
Tj
storage temperature
junction temperature
−55
+150
150
°C
°C
−
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-3
RATING CHARACTERISTIC CURVES ( 2SD1781KPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
SYMBOL PARAMETER
T
CONDITIONS
MIN.
MAX.
UNIT
−
−
BVCBO
BVCEO
BVEBO
ICBO
collector-base breakdown voltage IE = 0; IC =-50 uA
collector-emitter breakdown voltage IB = 0; IC =-1 mA
emitter-base breakdown voltage IC = 0; IE =-50 uA
40
32
5
V
V
−
V
collector cut-off current
emitter cut-off current
DC current gain
IE = 0; VCB = 20 V
IC = 0; V
−
500
500
390
nA
IEBO
−
nA
EB= 4 V
VCE = 3V; note 1
C = 100 mA
hFE
120
I
VCEsat
collector-emitter saturation
voltage
IC =-500 mA, IB=50 mA
−
mV
400
Typ.
Cc
fT
collector capacitance
transition frequency
IE = ie = 0; VCB =10 V ;f = 1 MHz
−
−
10
pF
IC = 50 mA; VCE = 5 V ;
f = 100 MHz
Typ.
MHz
150
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. hFE: Q Grade: 120~270
R Grade: 180~390
RATING CHARACTERISTIC CURVES ( 2SD1781KPT )
Fig.1 Grounded emittterpropgation
characteristics
Fig.2 Grounded emitter output
characteristics
1000
400
O
O
Ta=25 C
T
C
a=25
VCE
=6V
500
1mA
900uA
100
50
300
200
800uA
700uA
600uA
20
10
5
500uA
400uA
300uA
2
1
100
0
200uA
100uA
0.5
0.2
1
0.2
0.6 0.8 1.0 1.2 1.4 1.6
2
4
6
8
10
0
0.4
BASE TO EMITTER VOLTAGE: VBE (V)
0
COLLECTOR TO EMITTER VOLTAGE: VCE (V)
Fig.3 DC Current gain vs.
collector current
Fig.4 Collector-emitter saturation
voltage vs. collector current (1)
-1000
1000
VCE
Ta=25O
C
=5V
500
Ta=100OC
-100
-10
-1
25OC
200
100
IC/IB=50
20
10
-55OC
50
20
10
5
10 20
50
200
100 500
1
2
-1m
-10m
-100m
-1
1000
COLLECTOR CURRENT: I
C
(mA)
COLLECTOR CURRENT: I
C
(A)
RATING CHARACTERISTIC CURVES ( 2SD1781KPT )
Fig.5 Collector-emitter saturation
voltage vs. collector current (2)
Fig.6 Gain bandwidthproduct vs.
emitter current
1000
1000
IC/IB=10
Ta=25OC
VCE=5V
500
500
200
100
50
200
100
Ta=100OC
25OC
-55OC
50
20
10
20
10
5
10 20
50
200
100 500
1
2
-100 -200
-5 -10 -20 -50
1000
-1 -2
COLLECTOR CURRENT: I
C
(A)
EMITTER CURRENT: I
E
(mA)
Fig.8 Emitter input capacitance vs.
emitter-base voltage
Fig.7 Collector output capacitance
vs. collector-base voltage
100
O
O
a
T
=25 C
f=1MHZ
IE=0A
a
T
=25 C
f=1MHZ
IC=0A
200
50
100
50
20
10
20
10
5
5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
0.1 0.2
0.5 1.0 2.0
5.0
10
COLLECTOR TO BASE VOLTAGE : VCS (V)
EMITTER TO BASE VOLTAGE : VEB (V)
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