CHM6338JPT [CHENMKO]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管
| 型号： | CHM6338JPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM6338JPT
SURFACE MOUNT
Dual N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts CURRENT 5.2 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
(
)
4.06 0.160
* High density cell design for extremely low RDS(ON).
(
)
3.70 0.146
* Rugged and reliable.
* High saturation current capability.
8
5
(
)
.51 0.020
1
4
(0.012)
.10
(
)
5.00 0.197
CONSTRUCTION
(
)
4.69 0.185
( )BSC
1.27 0.05
* N-Channel Enhancement
(0.069)
1.75
(
)
.25 0.010
(
)
1.35 0.053
(0.007)
.17
(
)
.25 0.010
(0.002)
.05
(
)
6.20 0.244
D1 D1 D2 D2
(
)
5.80 0.228
8
1
5
CIRCUIT
Dimensions in millimeters
SO-8
4
S1 G1 S2
G2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM6338JPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
60
V
VGSS
±20
V
Maximum Drain Current - Continuous
- Pulsed
5.2
ID
A
(Note 3)
20
PD
TJ
2000
mW
°C
Maximum Power Dissipation
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
2005-02
RATING CHARACTERISTIC CURVES ( CHM6338JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
60
DSS
I
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
1
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
3
VGS(th)
1
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
33
41
10
41
55
V
V
GS=10V, I
D
=5.2A
=4.7A
RDS(ON)
m
Ω
Static Drain-Source On-Resistance
Forward Transconductance
GS=4.5V, I
D
gFS
S
VDS =15V, ID = 5.2A
Dynamic Characteristics
Ciss
745
100
60
Input Capacitance
VDS = 30V, VGS = 0V,
f = 1.0 MHz
Coss
Crss
Output Capacitance
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
22.2
3.2
4.7
14
5
29.5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=30V, I
GS=10V
D
=5.2A
nC
nS
Qgs
gd
Q
ton
tr
Turn-On Time
Rise Time
28
10
72
12
VDD
30V
=
,
D
I = 4.4A
GS
V
= 10 V
toff
tf
Turn-Off Time
Fall Time
36
6
Ω
GEN= 1
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
5.2
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 2.0A
GS
(Note 2)
VSD
1.2
V
V
= 0 V
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