CHN222M1PT [CHENMKO]
SWITCHING DIODE; 开关二极管
| 型号： | CHN222M1PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | SWITCHING DIODE |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHN222M1PT
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 80 Volts CURRENT 0.1 Ampere
APPLICATION
* Ultra high speed switching
FBPT-723
FEATURE
* Small surface mounting type. (FBPT-723)
* High speed. (TRR=1.5nSec Typ.)
* Suitable for high packing density.
* Maximum total power disspation is 150mW.
* Peak forward current is 300mA.
0.5±0.05
1.2±0.05
1.2±0.05
CONSTRUCTION
* Silicon epitaxial planar
0.05±0.04
0.84±0.05
0.32±0.05
MARKING
0.15(REF.)
0.47(REF.)
* 22
(3)
(1)
(2)
(2)
(1)
0.23(REF.)
0.28±0.05
CIRCUIT
0.25±0.05
0.22±0.05
(3)
Dimensions in millimeters
FBPT-723
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
VRRM
VRMS
VDC
CHN222M1PT
UNITS
Volts
Volts
Volts
Amps
Amps
pF
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
80
56
Maximum DC Blocking Voltage
80
0.1
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1uSec.
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note 2)
Maximum Operating Temperature Range
IO
IFSM
4.0
CJ
TRR
TJ
3.5
4.0
nSec
oC
+150
oC
Storage Temperature Range
TSTG
-55 to +150
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
UNITS
Volts
CHN222M1PT
Maximum Instantaneous Forward Voltage at IF= 100mA
Maximum Average Reverse Current at VR= 70V
VF
IR
1.20
0.1
uAmps
2004-6
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 6.0 volts.
2. Measured at applied froward current of 5mA and reverse voltage of 6.0 volts.
3. ESD sensitive product handling required.
RATING CHARACTERISTIC CURVES ( CHN222M1PT )
FIG. 1 - TYPICAL FORWARD CURRENT
DERAING CURVE
FIG. 2 - FORWARD CHARACTERISTICS
125
100
75
50
25
0
50
20
10
5
Ta=85o
C
2
1
50oC
25oC
0oC
-
30oC
0.5
0.2
0.1
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
AMBIENT TEMPERATURE, (o
C
)
FORWARD VOLTAGE, (V)
FIG. 4 - REVERSE CHARACTERISTICS
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
Ta=100o
C
f=1MHz
75oC
50oC
25oC
4
2
0
100
10
0oC
1
-
25oC
0.1
0.01
0
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
REVERSE VOLTAGE, (V)
REVERSE VOLTAGE, (V)
FIG. 5 - REVERSE RECOVERY TIME
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
10
9
8
7
6
5
4
3
2
1
0
0.01µF
D.U.T.
VR=6V
5
PULSE GENERATOR
OUTPUT 50
SAMPLING
OSCILLOSCOPE
50
0
1
2
3
4
5
6
7
8
9
10
FORWARD CURRENT, (mA)
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