CHT2907TPT [CHENMKO]
PNP Switching Transistor; PNP开关晶体管
| 型号： | CHT2907TPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | PNP Switching Transistor |
| 文件： | 总6页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT2907TPT
SURFACE MOUNT
PNP Switching Transistor
VOLTAGE 60 Volts CURRENT 0.6 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-75/SOT-416
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* High current (Max.=600mA).
* Suitable for high packing density.
* Low voltage (Max.=60V) .
0.1
0.2±
0.05
0.5
0.5
1.6±0.2
* High saturation current capability.
* Voltage controlled small signal switch.
1.0±0.1
0.3±
0.1
0.05
0.1
0.2±
0.8±0.1
0.05
CONSTRUCTION
* PNP Switching Transistor
MARKING
* PT
0.6~0.9
0~0.1
0.15±0.05
0.1Min.
1.6±0.2
(3)
(2)
C
E
CIRCUIT
(1)
B
SC-75/SOT-416
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage
MIN.
MAX.
-60
UNIT
open emitter
open base
−
V
V
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
−
-60
open collector
−
-5
−
-600
-800
-200
350
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
−
−
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−
−65
−
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2002-7
RATING CHARACTERISTIC CURVES ( CHT2907TPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
357
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = -60 V
IC = 0; VCB = -60 V; Tj = 125 OC
MIN.
MAX.
-10
UNIT
collector cut-off current
−
−
−
nA
uA
nA
-10
-10
−
IEBO
hFE
emitter cut-off current
DC current gain
IC = 0; VEB = 5 V
IC = -0.1 mA; VCE = -10V; note 1
IC = -1.0 mA; VCE = -10V
IC = -10 mA; VCE =- 10V
35
50
75
−
−
IC = -10 mA; VCE = -10V;Ta = -55OC 35
−
IC = -150 mA; VCE = -10V
IC = -150 mA; VCE = -1.0V
IC = -500 mA; VCE = -10V
IC = -150 mA; IB = -15 mA
IC = -500 mA; IB = -50 mA
100
300
−
50
40
−
−
VCEsat
collector-emitter saturation
voltage
-400
-1.6
-1.3
-2.6
8
mV
V
−
VBEsat
base-emitter saturation voltage IC = -150 mA; IB = -10 mA
C = -500 mA; IB = -50 mA
-0.6
−
V
I
V
Cc
Ce
collector capacitance
emitter capacitance
IE = ie = 0; VCB = - 5 V; f = 1 MHz
−
pF
pF
IC = ic = 0; VBE = -500 mV;
f = 1 MHz
−
30
fT
F
transition frequency
noise figure
IC = -20 mA; VCE = - 20 V;
f = 100 MHz
200
−
MHz
dB
IC = 100 µA; VCE = - 5 V; RS = 1 kΩ; −
4
f = 1.0 kHz
Switching times (between 10% and 90% levels);
ton
td
turn-on time
delay time
rise time
ICon = -150 mA; IBon = -15mA;
IBoff = −15 mA
−
−
−
−
−
−
35
10
40
100
80
30
ns
ns
ns
ns
ns
ns
tr
toff
ts
turn-off time
storage time
fall time
tf
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( CHT2907TPT )
Total power dissipation P = f (T )
Collector-base capacitance C = f (V
)
CB
tot
S
CB
f = 1MHz
102
pF
360
mW
5
300
270
240
210
180
150
120
90
Ccb
101
5
60
30
100
0
10 -1
5
10 0
5
10 1
V
5
10 2
0
15 30 45 60 75 90 105 120
150
°C
T
S
VCB
Permissible pulse load
Transition frequency f = f (I )
T C
P
/ P
= f (t )
V
= 5V
CE
totmax
totDC
p
103
103
MHz
Ptotmax
PtotDC
t p
5
t p
T
D
=
5
f T
T
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
102
5
0.2
0.5
101
5
100
101
10 0
5
101
5
10 2 mA
5
10 3
10-6 10-5 10-4 10-3 10-2
s
100
t p
Ι C
RATING CHARACTERISTIC CURVES ( CHT2907TPT )
Saturation voltage I = f (V
, V
)
Delay time t = f (I )
d C
C
BEsat
CEsat
h
= 10
Rise time t = f (I )
r C
FE
103
ns
103
mA
VBE = 0 V, VCC = 10 V,
VBE = 20 V, VCC = 30 V
ΙC
5
tr, td
VCE
VBE
102
5
tr
td
102
5
101
5
100
5
10-2
10-1
101
10 0
5
10 1
5
hFE = 20
5
10 2 mA
5
10 3
0
0.2 0.4 0.6 0.8 1.0 1.2
V
1.6
VBE sat,VCE sat
Ι C
Storage time t = f (I )
Fall time t = f (I )
f
stg
C
C
hFE = 10
5
103
ns
103
ns
t f
tstg
VCC = 30 V
5
5
102
5
102
5
hFE = 10
= 20
hFE
101
101
10 0
5
10 1
5
10 2 mA
Ι C
5
10 3
10 0
10 1
10 2 mA
Ι C
5
10 3
RATING CHARACTERISTIC CURVES ( CHT2907TPT )
DC current gain h = f (I )
FE
C
V
= 5V
CE
103
5
hFE
150 O
C
25 O
C
102
5
-50 O
C
101
10 -1
10 0
10 1
10 2 mA 10 3
Ι C
RATING CHARACTERISTIC CURVES ( CHT2907TPT )
Test circuits
Delay and rise time
-30 V
200ohmS
Osc.
Input
Z
tr
0 = 50ohmS
< 2ns
t
r < 5 ns
1 k
0
-16 V
50ohmS
200 ns
Storage and fall time
-6 V
+15 V
37ohmS
Input
Osc.
Z
tr
0 = 50ohmS
< 2 ns
1k
t
r < 5 ns
1 k
0
-30 V
50ohmS
200 ns
Oscillograph: R > 100ohmS, C < 12pF, t < 5ns
r
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