CHT4401TPTGP [CHENMKO]
Transistor,;![CHT4401TPTGP](http://pdffile.icpdf.com/pdf2/p00315/img/icpdf/CHT4401TPTGP_1892716_icpdf.jpg)
型号: | CHT4401TPTGP |
厂家: | ![]() |
描述: | Transistor, |
文件: | 总6页 (文件大小:242K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CHENMKO ENTERPRISE CO.,LTD
CHT4401TPT
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.6 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SC-75/SOT-416
* Small surface mounting type. (SC-75/SOT-416)
* Low current (Max.=600mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
0.1
0.2±
0.05
* High saturation current capability.
* Voltage controlled small signal switch.
0.5
1.6±0.2
1.0±0.1
0.3±
0.5
0.1
0.05
0.1
0.2±
0.05
0.8±0.1
CONSTRUCTION
* NPN Switching Transistor
MARKING
0.6~0.9
0~0.1
* NT
0.15±0.05
0.1Min.
1.6±0.2
3
CIRCUIT
1
2
SC-75/SOT-416
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
60
UNIT
−
−
V
V
V
open emitter
open base
collector-emitter voltage
40
6
VEBO
open collector
−
−
−
emitter-base voltage
collector current DC
mA
IC
600
Ptot
total po
wer dissipation
T
amb ≤ 25 °C; note1
200
mW
Tstg
Tj
storage temperature
−55
−
+150
150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−55
+150
2004-11
Note
1. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC CURVES ( CHT4401TPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
°
C/W
thermal resistance from junction to ambient
200
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 60 V
MIN.
MAX.
50
UNIT
−
−
nA
nA
IC = 0; VEB = 6 V
VCE = 1 V; note 1
50
20
−
−
−
I
I
I
C = 0.1 mA
C = 1 mA
C = 10 mA
40
80
300
100
IC = 1 50 mA
VCE
2
V;note 2
mA
=
−
I
40
C = 500
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 1 5 mA
IC = 500 mA; IB = 5 0 mA
400
mV
mV
−
−
750
950
1200
6.5
VBEsat
base-emitter saturation voltage IC = 150 mA; IB = 15 mA
C = 500 mA; IB = 5 0 mA
750
mV
mV
pF
−
I
Cc
Ce
collector capacitance
emitter capacitance
IE = ie = 0; VCB = 5 V; f = 1 4 0 K Hz
−
−
IC = ic = 0; VBE = 500 mV;
f = 140KHz
pF
30
fT
transition frequency
IC = 20 mA; VCE = 10 V;
f = 100 MHz
250
−
MHz
Switching times (between 10% and 90% levels);
ton
td
turn-on time
delay time
rise time
ICon = 150 mA; IBon = 15 mA;
IBoff = −1 5 mA
−
−
−
−
−
−
35
ns
ns
ns
ns
ns
ns
15
tr
20
toff
ts
turn-off time
storage time
fall time
250
200
60
tf
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( CHT4401TPT )
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
500
400
300
200
100
0
0.4
0.3
0.2
0.1
V
= 5V
CE
β = 10
125 °C
25 °C
125 °C
25 °C
- 40 °C
- 40 °C
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
β = 10
V
= 5V
1
CE
- 40 °C
25 °C
- 40 °C
0.8
0.6
0.4
25 °C
125 °C
125 °C
1
10
100
500
0.1
1
10
25
I
C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
500
100
20
16
12
8
f = 1 MHz
V
= 40V
CB
10
1
C
0.1
C
ob
4
25
50
75
100
125
150
0.1
1
10
100
TA - AMBIENT TEMPERATURE (°C)
REVERSE BIAS VOLTAGE (V)
RATING CHARACTERISTIC CURVES ( CHT4401TPT )
Turn On and Turn Off Times
Switching Times
vs Collector Current
vs Collector Current
400
320
240
160
80
400
320
240
160
80
I
I
c
c
IB1= IB2
=
IB1= IB2
=
10
10
V
= 25 V
V
= 25 V
cc
cc
t
s
t
r
t
off
t
f
t
on
t
d
0
0
10
100
1000
10
100
1000
I
- COLLECTOR CURRENT (mA)
I
- COLLECTOR CURRENT (mA)
C
C
Power Dissipation vs
Ambient Temperature
1
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
RATING CHARACTERISTIC CURVES ( CHT4401TPT )
Common Emitter Characteristics
Common Emitter Characteristics
2.4
2
8
6
4
2
0
V
I
= 10 V
= 10 mA
V
T
= 10 V
= 25oC
CE
CE
h
C
A
re
h
ie
h
fe
1.6
1.2
0.8
0.4
0
h
oe
h
oe
h
h
re
fe
h
ie
0
10
20
30
40
50
60
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (o C)
I C - COLLECTOR CURRENT (mA)
Common Emitter Characteristics
1.3
1.25
1.2
I
T
= 10 mA
= 25oC
C
A
h
fe
1.15
1.1
h
ie
1.05
1
h
h
0.95
0.9
re
0.85
0.8
oe
0.75
0
5
10
15
20
25
30
35
VCE - COLLECTOR VOLTAGE (V)
RATING CHARACTERISTIC CURVES ( CHT4401TPT )
Test Circuits
30 V
200 Ω
16 V
1.0 KΩ
0
≤ 200ns
500 Ω
FIGURE 1: Saturated Turn-On Switching Timer
6.0 V
- 1.5 V
NOTE: BVEBO= 5.0 V
37 Ω
1k
30 V
1.0 KΩ
0
≤ 200ns
50 Ω
FIGURE 2: Saturated Turn-Off Switching Time
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