CHT817PT [CHENMKO]
NPN Muti-Chip General Purpose Amplifier; NPN穆蒂芯片通用放大器
| 型号： | CHT817PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN Muti-Chip General Purpose Amplifier |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT817PT
SURFACE MOUNT
NPN Muti-Chip General Purpose Amplifier
VOLTAGE 45 Volts CURRENT 0.5 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
* Small surface mounting type. (SOT-23)
* High current gain.
SOT-23
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
(1)
(2)
(3)
MARKING
* HFE(Q):LT
* HFE(R):IT
* HFE(S):MT
(
)
(
)
.055 1.40
.028 0.70
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
.086 (2.20)
(
)
.045 1.15
3
CIRCUIT
(
)
.033 0.85
1
2
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
UNIT
−
−
−
−
−
−
−
−
50
V
V
V
V
VCEO
VCES
VEBO
IC
collector-emitter voltage
collector-base voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
45
open emitter
open collector
5
5
500
1000
200
330
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-9
RATING CHARACTERISTIC ( CHT817PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
Note
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to ambient
note 1
105
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE 0; VCB = 25 V
IC = 0; VCB = 25 V; TA = 150 O
MIN.
MAX.
100
UNIT
−
−
−
=
collector cut-off current
nA
uA
nA
C
50
IEBO
hFE
emitter cut-off current
DC current gain
IC = 0; VEB = 4 V
100
600
700
IC = 100 mA; VCE =1.0V; note 1
100
−
VCEsat
collector-emitter saturation
voltage
=
IC 500 mA ; IB = 50 mA
mV
V
VBEsat
base-emitter saturation voltage
1.2
IC = 500 mA; IB = 50mA
Cc
fT
collector capacitance
transition frequency
IE = ie = 0; VCB =10V ; f = 1 MHz
−
6.0
pF
IC = 50 mA; VCE = 5 V;
f = 100 MHz
170
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600
RATING CHARACTERISTIC CURVES ( CHT817PT )
Total power dissipation P = f (T )
Collector cutoff current I
= f (T )
tot
S
CBO A
V
= 25V
CB
105
nA
400
mW
VCBO
104
300
250
200
150
100
50
max
103
typ
102
101
100
0
0
OC
oC
0
20
40
60
80
100 120
150
50
100
150
T
S
TA
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 3
K/W
10 3
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 2
10 1
10 0
0.2
0.5
10 1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
RATING CHARACTERISTIC CURVES ( CHT817PT )
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
= f (V
), h = 10
I
= f (V
), h = 10
C
CEsat
FE
C
BEsat
FE
103
mA
103
mA
Ι C
Ι C
150 oC
25 oC
150 o
25 o
-50 o
C
C
-50 oC
102
5
102
5
C
101
5
101
5
100
5
100
5
10-1
0
10-1
0
1.0
2.0
3.0
V
4.0
0.2
0.4
0.6
V
0.8
VCEsat
VBEsat
DC current gain h = f (I )
Transition frequency f = f (I )
FE
C
T
C
V
= 5V
V
= 5V
CE
CE
103
103
MHz
5
5
100 o
25 o
C
C
f T
hFE
-50 o
C
102
5
102
5
101
5
100
101
10-1
100
101
102 mA 103
3
100
101
102
mA 10
Ι C
Ι C
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