CHT9013PT [CHENMKO]
NPN Silicon Transisto r; NPN硅Transisto ř
| 型号： | CHT9013PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN Silicon Transisto r |
| 文件： | 总3页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT9013PT
SURFACE MOUNT
NPN SiliconTransistor
VOLTAGE 25Volts CURRENT 0.5 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SOT-23
FEATURE
* Surface mount package. (SOT-23)
* Suitable for high packing density.
(1)
(2)
CONSTRUCTION
(3)
*NPN Silicon Transistor
MARKING
* HFE(L):J3
* HFE(H):J2
* HFE(J):J1
(
)
(
)
.055 1.40
.028 0.70
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
.086 (2.20)
(
)
.045 1.15
(3)
C
CIRCUIT
(
)
.033 0.85
(1)
B
E(2)
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
40
UNIT
−
−
−
V
V
V
VCEO
VEBO
collector-emitter voltage
emitter-base voltage
open base
25
5
open collector
IC
collector current (DC)
total power dissipation
−
mA
500
mW
Ptot
Tstg
−
300
Tamb ≤ 25 °C; note 1
−55
+150
°C
storage temperature
Tj
junction temperature
−
150
°C
°C
Tamb
operating ambient temperature
−55
+150
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-8
RATING CHARACTERISTIC CURVES ( CHT9013PT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
MIN.
SYMBOL
ICBO
PARAMETER
CONDITIONS
VCB = 40V,IE=0
MAX.
0.1
UNIT
uA
collector cut-off current
−
−
−
uA
uA
VCE=20V,IB=0
0.1
0.1
ICEO
collector cut-off current
emitter cut-off current
IEBO
VEB=5V ,IC=0
IC = 50 mA; VCE = 1V
120
400
hFE
DC current gain
I = 500 mA; VCE
=1V
C
40
−
collector-emitter saturation
voltage
VCE(sat)
VBE(sat)
IC = 500 mA; IB = 50 mA
IC = 500 mA; IB = 50 mA
−
V
0.6
1.2
−
base-emitter saturation voltage
transition frequency
−
V
IC = 20 mA; VCE = 6 V;
f = 30MHz
fT
MHz
150
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification L: 120 to 200, H: 200 to 350, J: 300 to 400
RATING CHARACTERISTIC CURVES ( CHT9013PT )
Typical Electrical Characteristics
FIG. 2 - DC collector current
FIG. 1 - Static Characteristic
20
18
16
1000
IB=160uA
IB=140uA
VCE=1V
IB=120uA
IB=100uA
14
12
100
IB=80uA
10
8
IB=60uA
IB=40uA
IB=20uA
6
10
4
2
0
1
40
50
0
10
20
30
100
10000
1
10
1000
VCE(V),COLLECTOR-EMITTER VOLTAGE
IC(mA),COLLECTOR CURRENT
FIG. 3 - Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
FIG. 4 - Current Gain Bandwidth Product
1000
1000
VCE=6V
IC=10IB
100
100
VBE(sat)
10
10
VCE(sat)
1
1
100
10000
1
10
1000
100
10000
1
10
1000
IC(mA),COLLECTOR CURRENT
IC(mA),COLLECTOR CURRENT
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