FPL14PT [CHENMKO]
FAST RECOVERY SILICON RECTIFIER; 快速恢复硅整流
| 型号： | FPL14PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | FAST RECOVERY SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FPL11PT
THRU
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
FPL17PT
VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere
FEATURE
*Small Surface Mounting Type. (SMP)
* Low leakage current
* Fast recovery times for high efficiency
* Glass passivated junction
SMP
* High temperature soldering guaranteed :
260oC/10 seconds at terminals
0.081 (2.05)
0.077 (1.95)
0.170 (4.31)
0.163 (4.15)
(3)
(1)
(2)
0.019 (0.50 Min.)
0.077 (1.95)
0.073 (1.85)
0.045 (1.16)
0.042 (1.07)
0.005 (0.15 Min.)
0.019 (0.50 Min.)
0.264 (6.70)
0.254 (6.46)
0.212 (5.38)
0.208 (5.29)
2
1
CIRCUIT
0.055 (1.40)
0.051 (1.30)
SMP
Dimensions in inches and (millimeters)
3
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
VRRM
FPL15PT FPL16PT FPL17PT UNITS
FPL11PT FPL12PT FPL13PT FPL14PT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
VRMS
Maximum DC Blocking Voltage
VDC
100
1000
Maximum Average Forward Rectified Current TL = 110oC
IO
1.0
30
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
CJ
Amps
pF
Typical Junction Capacitance (Note 1)
15
30
oC / W
oC / W
oC
(Note 2)
(Note 3)
R
R
JL
Maximum Thermal Resistance
JA
75
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
FPL15PT
FPL17PT
FPL16PT
FPL11PT FPL12PT FPL13PT FPL14PT
CHARACTERISTICS
SYMBOL
UNITS
Volts
Maximum Instantaneous Forward Voltage at 1.0 A DC
VF
1.3
Maximum DC Reverse Current
5.0
uAmps
uAmps
at Rated DC Blocking Voltage at TA = 25oC
IR
Maximum Full Load Reverse Current Average,
Full Cycle at TA = 55oC
100
Maximum Reverse Recovery Time (Note 4)
trr
150
250
500
nSec
2004-7
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
2. Thermal Resistance Junction to terminal 6.0 mm2 copper pads to each terminal
3. Thermal Resistance Junction to ambient 6.0 mm2 copper pads to each terminal
4. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A
RATING CHARACTERISTIC CURVES ( FPL11PT THRU FPL17PT )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
1.50
1.25
1.00
Single Phase
Half Wave 60Hz
Resistive or
( - )
PULSE
GENERATOR
(NOTE 2)
Inductive Load
D.U.T
0
( + )
25 Vdc
(approx)
( - )
-0.25A
.75
.50
.25
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
0
1cm
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
SET TIME BASE FOR
50/100 nS/cm
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
100
Pulse Width = 300uS
1% Duty Cycle
10
1.0
0.1
4.0
TJ
=100oC
1.0
.4
TJ
=25oC
.1
.01
0
.04
TJ
=25oC
100
.01
0
20
40
60
80
120
140
0
.2
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
INSTANTANEOUS FORWARD VOLTAGE, ( V )
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
30
8.3ms Single Half Sine-Wave
(JEDEC Method)
60
40
25
20
15
20
10
TJ
=25oC
6
4
10
5
0
2
1
1
2
5
10
20
50
100
.1
.2
.4
1.0
2
4
10
20
40
100
NUMBER OF CYCLES AT 60 Hz
REVERSE VOLTAGE, ( V )
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