HPL42CTPT [CHENMKO]
HIGH EFFICIENCY SILICON RECTIFIER; 高效硅整流
| 型号： | HPL42CTPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | HIGH EFFICIENCY SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HPL41CTPT
CHENMKO ENTERPRISE CO.,LTD
THRU
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 4.0 Amperes
HPL48CTPT
PROVISIONAL SPEC.
FEATURE
*Small Surface Mounting Type. (SMP)
* Low forward voltage, high current capability
* Low leakage current
* Glass passivated junction
* High temperature soldering guaranteed :
SMP
260oC/10 seconds at terminals
0.081 (2.05)
0.077 (1.95)
0.170 (4.31)
0.163 (4.15)
(3)
(1)
(2)
0.019 (0.50 Min.)
0.077 (1.95)
0.073 (1.85)
0.045 (1.16)
0.042 (1.07)
0.005 (0.15 Min.)
0.019 (0.50 Min.)
0.264 (6.70)
0.254 (6.46)
0.212 (5.38)
0.208 (5.29)
(2)
(1)
CIRCUIT
0.055 (1.40)
0.051 (1.30)
(3)
SMP
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
HPL41CTPT HPL42CTPT HPL43CTPT HPL44CTPT HPL45CTPT HPL46CTPT HPL47CTPT HPL48CTPT
SYMBOL
VRRM
UNITS
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
700
VRMS
Maximum DC Blocking Voltage
VDC
100
1000
Maximum Average Forward Rectified Current TL = 100oC
IO
4.0
Amps
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
60
Typical Junction Capacitance (Note 1)
CJ
30
20
pF
oC
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
HPL41CTPT HPL42CTPT HPL43CTPT HPL44CTPT HPL45CTPT HPL46CTPT HPL47CTPT HPL48CTPT
CHARACTERISTICS
SYMBOL
UNITS
Volts
Maximum Instantaneous Forward Voltage at 2.0 A DC
VF
1.0
1.3
5.0
1.5
1.7
Maximum DC Reverse Current
uAmps
uAmps
at Rated DC Blocking Voltage at TA = 25oC
IR
Maximum Full Load Reverse Current Average,
Full Cycle at TA = 55oC
100
Maximum Reverse Recovery Time (Note 2)
trr
50
70
nSec
2004-7
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A
RATING CHARACTERISTIC CURVES ( HPL41CTPT THRU HPL48CTPT )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
4.0
2.0
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
0
( + )
25 Vdc
(approx)
( - )
-0.25A
Single Phase
Half Wave 60Hz
Resistive or
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
Inductive Load
INDUCTIVE
-1.0A
0
1cm
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
SET TIME BASE FOR
10/20 nS/cm
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
100
10
Pulse Width = 300uS
1% Duty Cycle
T
J
J
=125oC
=100oC
1.0
0.1
T
1.0
.1
TJ
=25oC
TJ
=25oC
.01
.001
.01
0
20
40
60
80
100
120
140
0
.2
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
INSTANTANEOUS FORWARD VOLTAGE, ( V )
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
8.3ms Single Half Sine-Wave
(JEDEC Method)
60
40
50
40
30
20
10
6
4
20
TJ
=25oC
10
0
2
1
1
2
5
10
20
50
100
.1
.2
.4
1.0
2
4
10
20 40
100
NUMBER OF CYCLES AT 60 Hz
REVERSE VOLTAGE, ( V )
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