PSM12PT [CHENMKO]
SUPER FAST SILICON RECTIFIER; 超快速硅整流
| 型号： | PSM12PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | SUPER FAST SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSM11PT
THRU
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 - 200 Volts CURRENT 0.8 Ampere
PSM13PT
FEATURES
* For surface mounted applications
* Low profile package
* Built-in strain relief
* Superfast recovery times for high efficiency
* Metallurgically bonded construction
* Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Glass passivated junction
SOD-123S
* High temperature soldering guaranteed :
260oC/10 seconds at terminals
1.4~1.95
0.5~1.0
2.55~3.0
MECHANICAL DATA
Case: JEDEC SOD-123S molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Weight: 0.001 ounces, 0.032 gram
0.8~1.35
0.25(min)
0.25(max)
2.5~3.95
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
SOD-123S
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
VRRM
PSM11PT
PSM12PT
PSM13PT
200
UNITS
Volts
Volts
Volts
50
35
50
100
70
VRMS
140
Maximum DC Blocking Voltage
VDC
100
200
Maximum Average Forward Rectified Current TL = 120oC
IO
0.8
30
15
Amps
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
Typical Junction Capacitance (Note 1)
CJ
pF
oC
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
UNITS
Volts
PSM11PT
PSM12PT
PSM13PT
Maximum Instantaneous Forward Voltage at 0.8 A DC
VF
0.95
Maximum DC Reverse Current
@ TA = 25oC
@ TA = 100oC
5.0
50
35
uAmps
uAmps
nSec
IR
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 2)
trr
2001-6
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A
RATING CHARACTERISTIC CURVES ( PSM11PT THRU PSM13PT )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
1.0
0.5
0
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
0
( + )
25 Vdc
(approx)
( - )
-0.25A
Single Phase
Half Wave 60Hz
Resistive or
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
Inductive Load
INDUCTIVE
-1.0A
1cm
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
SET TIME BASE FOR
10 nS/cm
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
100
10
Pulse Width = 300uS
1% Duty Cycle
T
J
=100oC
=75oC
1.0
0.1
TJ
1.0
.1
TJ
=25oC
.01
TJ
=25oC
.001
.01
0
20
40
60
80
100
120
140
0
.2
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
INSTANTANEOUS FORWARD VOLTAGE, ( V )
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
30
8.3ms Single Half Sine-Wave
(JEDEC Method)
60
40
25
20
15
20
10
6
4
10
TJ
=25oC
5
0
2
1
1
2
5
10
20
50
100
.1
.2
.4
1.0
2
4
10
20 40
100
NUMBER OF CYCLES AT 60 Hz
REVERSE VOLTAGE, ( V )
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