TSPD3500LGP [CHENMKO]

Silicon Surge Protector,;


型号：	TSPD3500LGP
厂家：	CHENMKO ENTERPRISE CO. LTD.
描述：	Silicon Surge Protector,
文件：	总2页 (文件大小：90K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TSPD0080LGP

THRU

CHENMKO ENTERPRISE CO.,LTD

BI-DIRECTIONAL THYRISTOR SURGE PROTECTIVE DEVICE

BREAKOVER VOLTAGE 25 TO 400 VOLTS

45A PEAK PULSE CURRENT

TSPD3500LGP

APPLICATIONS

* T1/E1, ISDN, and ADSL transmission equipment

* Customer Premises Equipment(CPE) such as phones, modems

* PBX's and other seitches

SMB

* Data lines and security systems

FEATURES

* 45A peak pulse current at 10/1000 uS

* Stand-off voltage range: 6 to 320 volts

* Bi-directional protection in a singel device

0.083 (2.11)

0.077 (1.96)

0.155 (3.94)

0.130 (3.30)

(1)

(2)

MECHANICAL DATA

Case: JEDEC SMB molded plastic

Polarity: Bidirectional

0.190 (4.75)

0.160 (4.06)

0.012 (0.305)

0.006 (0.152)

Mounting Position: Any

0.096 (2.44)

0.084 (2.13)

0.060 (1.52)

0.030 (0.76)

0.220 (5.59)

0.205 (5.21)

CIRCUIT

(1)

(2)

SMB

Dimensions in inches and (millimeters)

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

Characteristic

Non-Repetive Peak Impulse Current ( 10/1000us )

Non-Repetive Peak On-State Current ( 8.3mS one-half cycle )

Junction Temperature Range

Storage Temperature Range

Thermal Resistance,Junction to Lead

Thermal Resistance,Junction to Ambient

Symbol

Value

Unit

℃

Ipp

ITSM

-40 to +150

-55 to +150

TSTG

℃

℃/W

100

Symbol

Parameter

V^DRMStand-off Voltage

I_PP

I^DRMLeakage current at stand-off voltage

V^BRBreakdown voltage

I_BO

I_H

I^BR

Breakdown current

I_BR

I_DRM

V^BOBreakdown voltage

V_BR

V_T

I^BO

I^H

Breakdown current

Holding current

V_DRM

V_BO

V^T

I^PP

C^O

On state voltage

Peak pulse current

Off-state capacitance

2007-01

RATING CHARACTERISTIC ( TSPD0080LGP THRU TSPD3500LGP )

ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )

Raed

Repetive

Off-State Current @ Voltage

Voltage V^DRM

Off-State

Leakage Breakover

Breakover

Current

I^BO

Holding

Current

On-State

Voltage

@ IT=2.2A

Off-State

Capacitance

Part Number

Min Max Min Max

(mA) (mA) (mA) (mA)

50 800 50 800

50 800 150 800

V^DRM(V) IDRM (uA)

VBO (V)

VT (V)

CO (pF)

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4.0

150

140

130

180

220

260

300

350

400

140

170

190

220

275

320

Note: Off-state capacitance measured at f=1MHz, 1.0Vrms signal, Vr=2Vdc bias

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