概述
数据手册1N4003GP 概述
1 Amp Glass Passivated Rectifier 50-1000 Volts 1安培玻璃钝化整流50-1000伏
1N4003GP 数据手册
通过下载1N4003GP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载1N4001GP
THRU
1N4007GP
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
·
·
·
·
Glass Passivated Junction
Low Current Leakage
1 Amp Glass
PassivatedRectifier
50 - 1000 Volts
Metalurgically Bonded Construction
Low Cost
Maximum Ratings
DO-41
·
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 20°C/W Junction To Lead
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum Maximum
Catalog
Number
RMS
DC
Voltage
Blocking
Voltage
D
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
---
---
---
---
---
---
---
50V
100V
200V
400V
600V
800V
1000V
35V
70V
50V
100V
200V
400V
600V
800V
1000V
A
Cathode
Mark
140V
280V
420V
560V
700V
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
TA = 75°C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine
DIMENSIONS
Maximum
INCHES
MIN
.166
.080
.028
MM
MIN
4.10
2.00
.70
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
VF
IR
1.1V
IFM = 1.0A;
TJ = 25°C*
DIM
A
B
C
D
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
NOTE
1.000
25.40
---
5.0mA
50mA
TJ = 25°C
TJ = 125°C
Typical Junction
Capacitance
CJ
15pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 msec, Duty cycle 2%
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1N4001GP thru 1N4007GP
Figure 1
Typical Forward Characteristics
20
Figure 2
Forward Derating Curve
10
6
1.2
1.0
.8
4
2
1
.6
.4
Amps
.6
.4
.2
Amps
.2
25°C
.1
.06
.04
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
50
75
100
125
150
175
0
°C
.02
.01
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
.4
.6
1.4
.8
1.0
1.2
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
TJ=25°C
pF
10
6
4
2
1
400
1000
.1
.2
.4
1
2
10 20
200
4
40
100
Volts
Junction Capacitance - pFversus
Reverse Voltage - Volts
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1N4001GP thru 1N4007GP
Figure 4
Typical Reverse Characteristics
Figure 5
Peak Forward Surge Current
100
60
60
50
40
20
40
30
20
10
6
Amps
4
TA=100°C
10
0
2
1
80
100
1
60
4
6
10 20
40
8
2
mAmps
.6
.4
Cycles
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
.2
TA=25°C
.1
.06
.04
.02
.01
20
40
60
80
140
100
120
Volts
Instantaneous Reverse Leakage Current - MicroAmperesversus
Percent Of Rated Peak Reverse Voltage - Volts
www.cnelectr.com
1N4003GP 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N4003GP.TR | FAIRCHILD | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, | 获取价格 |
|
| 1N4003GP/4F | VISHAY | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N4003GP/4H | VISHAY | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N4003GP/51 | VISHAY | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N4003GP/54 | VISHAY | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N4003GP/60 | VISHAY | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N4003GP/64 | VISHAY | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N4003GP/70 | VISHAY | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N4003GPE | VISHAY | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N4003GPE/100 | VISHAY | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
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