CS5101EDW16 [CHERRY]

Secondary Side Post Regulator for AC/DC and DC/DC Multiple Output Converters; 次级侧后稳压器的AC / DC和DC / DC多路输出转换器
CS5101EDW16
型号: CS5101EDW16
厂家: CHERRY SEMICONDUCTOR CORPORATION    CHERRY SEMICONDUCTOR CORPORATION
描述:

Secondary Side Post Regulator for AC/DC and DC/DC Multiple Output Converters
次级侧后稳压器的AC / DC和DC / DC多路输出转换器

转换器 稳压器 开关式稳压器或控制器 电源电路 开关式控制器 光电二极管
文件: 总7页 (文件大小:157K)
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CS5101  
Secondary Side Post Regulator for AC/DC  
and DC/DC Multiple Output Converters  
Description  
Features  
The CS5101 is a bipolar monolithic  
The CS5101 features include a totem  
pole output with 1.5A peak output  
current capability, externally pro-  
grammable overcurrent protection,  
an on chip 2% precision 5V refer-  
ence, internally compensated error  
amplifier, externally synchronized  
switching frequency, and a power  
switch drain voltage monitor. It is  
available in a 14 lead plastic DIP or  
a 16 lead wide body SO package.  
1.5A Peak Output  
secondary side post regulator  
(SSPR) which provides tight regula-  
tion of multiple output voltages in  
AC-DC or DC-DC converters.  
Leading edge pulse width modula-  
tion is used with the CS5101.  
(Grounded Totem Pole)  
8V to 75V Gate Drive Voltage  
8V to 45V Supply Voltage  
300ns Propagation Delay  
1% Error Amplifier  
Reference Voltage  
The CS5101 is designed to operate  
over an 8V to 45V supply voltage  
(VCC) range and up to a 75V drive  
voltage (VC).  
Lossless Turn On and  
Turn Off  
Sleep Mode: < 100µA  
Overcurrent Protection with  
Dedicated Differential Amp  
Application Diagram  
Synchronization to External  
Clock  
V
External Power Switch  
Drain Voltage Monitor  
SY  
L1  
C
R4  
V
4
R10  
3
OUT  
1
Q1  
TR  
5
R8  
R9  
R11  
R12  
R13  
R14  
Gnd  
6
+
Package Options  
C6  
C
R5  
R5  
R6  
14L PDIP  
1
VD  
SYNC  
VCC  
VC  
C
R1  
VREF  
LGnd  
VFB  
VG  
C5  
PGnd  
IS COMP  
IS-  
R1  
R2  
C
R3  
R7  
COMP  
RAMP  
IS+  
V
V
D
SYNC  
V
V
C
CC  
CS5101  
SSPR  
V
V
16L SO Wide  
G
REF  
C
R3  
R2  
LGnd  
PGnd  
C4  
1
VD  
SYNC  
VCC  
V
IS COMP  
FB  
VC  
IS-  
COMP  
RAMP  
+
IS+  
R4  
C2  
C3  
VREF  
VG  
C1  
DGnd  
PGnd  
PGnd  
IS COMP  
IS-  
2
AGnd  
VFB  
C
R
COMP  
RAMP  
IS+  
Cherry Semiconductor Corporation  
2000 South County Trail, East Greenwich, RI 02818  
Tel: (401)885-3600 Fax: (401)885-5786  
Email: info@cherry-semi.com  
Web Site: www.cherry-semi.com  
Rev. 3/31/97  
1
A
¨
Company  
Absolute Maximum Ratings  
Power Supply Voltage, VCC .....................................................................................................................................-0.3V to 45V  
VSYNC and Output Supply Voltages, VC, VG, VSYNC, VD.....................................................................................-0.3V to 75V  
VIS+, VIS- (VCC Ð 4V, up to 24V)..................................................................................................................................-0.3 to 24V  
VREF, VFB, VCOMP, VRAMP, VISCOMP............................................................................................................................-0.3 to 10V  
Operating Junction Temperature, TJ .......................................................................................................................-40 to 150¡C  
Operating Temperature Range ..................................................................................................................................-40 to 85¡C  
Storage Temperature Range ....................................................................................................................................-65 to 150¡C  
Output Energy (capacitive load per cycle).............................................................................................................................5µJ  
ESD Human Body ....................................................................................................................................................................2kV  
ESD Machine Model...............................................................................................................................................................200V  
Lead Temperature Soldering  
Wave Solder (through hole styles only)....................................................................................10 sec. max, 260¡C peak  
Reflow (SMD styles only).....................................................................................60 sec. max above 183¡C, 230¡C peak  
-40¡C ² TA ² 85¡C; -40¡C ² TJ ² 150¡C; 10V < VCC < 45V; 8V < VC <75V unless otherwise specified.  
Electrical Characteristics:  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Error Amplifier  
Input Voltage Initial Accuracy  
V
FB = VCOMP; VCC = 15V;  
1.98  
1.94  
2.00  
2.00  
2.02  
V
T = 25¡C (Note 1)  
Input Voltage  
VFB = VCOMP, includes line and temp  
2.06  
500  
V
Input Bias Current  
Open Loop Gain  
Unity Gain Bandwidth  
Output Sink Current  
Output Source Current  
VCOMP High  
VFB = 0V; IVFB flows out of pin  
1.5V < VCOMP < 3.0V  
nA  
dB  
60  
0.7  
2
70  
1.0  
8
1.5V < VCOMP < 3.0V; (Note 1)  
MHz  
V
COMP = 2.0V; VFB = 2.2V  
COMP = 2.0V; VFB = 1.8V  
mA  
mA  
V
V
2
6
VFB = 1.8V  
3.3  
0.85  
60  
3.5  
1.0  
70  
3.7  
VCOMP Low  
VFB = 2.2V  
1.15  
V
PSRR  
10V < VCC < 45V;  
dB  
VFB = VCOMP (Note 1)  
Voltage Reference  
Output Voltage Initial Accuracy VCC = 15V; T = 25¡C (Note 1)  
4.9  
4.8  
5.0  
5.0  
10  
5.1  
5.2  
60  
V
Output Voltage  
Line Regulation  
Load Regulation  
Current Limit  
0A < IREF < 8mA  
V
10V < VCC < 45V; IREF = 0A  
0A < IREF < 8mA  
mV  
mV  
mA  
V
20  
60  
VREF = 4.8V  
10  
50  
VREF_OK FAULT V  
VSYNC = 5V; VREF = VLOAD  
VSYNC = 5V; VREF = VLOAD  
4.10  
4.30  
40  
4.40  
4.50  
100  
4.60  
4.80  
250  
VREF_OK V  
V
VREF_OK Hysteresis  
mV  
Current Sense Amplifier  
IS COMP High V  
IS COMP Low V  
Source Current  
Sink Current  
IS+ = 5V; ISÐ = IS COMP  
IS+ = 0V; ISÐ = IS COMP  
IS+ = 5V; ISÐ = 0V  
4.7  
0.5  
2.0  
10  
5.0  
1.0  
10  
20  
80  
80  
80  
0.8  
5.3  
1.3  
V
V
mA  
mA  
dB  
dB  
dB  
MHz  
IS- = 5V; IS+ = 0V  
Open Loop Gain  
CMRR  
1.5V ² VCOMP ² 4.5V; RL = 4k½  
(Note 1)  
60  
60  
PSRR  
10V < VCC < 45V, (Note 1)  
60  
Unity Gain Bandwidth  
1.5V ² VCOMP ² 4.5V; RL = 4k½ (Note 1) 0.5  
2
Electrical Characteristics: continued  
TEST CONDITIONS MIN  
PARAMETER  
TYP  
MAX  
UNIT  
Current Sense Amplifier: continued  
Input Offset Voltage  
VIS+ = 2.5V; VIS- = VISCOMP  
-8  
0
8
mV  
nA  
nA  
V
Input Bias Currents  
Input Offset Current (IS+, IS-)  
VIS+ = VIS- = 0V; IIS flows out of pins  
20  
0
250  
250  
-250  
-0.3  
Input Signal Voltage Range  
(Note 1)  
V
CC-4.0  
RAMP/SYNC Generator  
Ramp Source Current Initial  
Accuracy  
V
SYNC = 5V, VRAMP = 2.5V ; T = 25¡C  
0.18  
0.20  
0.22  
0.24  
mA  
(Note 1)  
Ramp Source Current  
Ramp Sink Current  
VSYNC = 5V; VRAMP = 2.5V  
0.16  
1.0  
3.3  
1.4  
1.7  
0.3  
2.3  
0.20  
4.0  
3.5  
1.5  
2.0  
0.6  
2.5  
1
mA  
mA  
V
V
SYNC = 0V; VRAMP = 2.5V  
SYNC = 5V  
RAMP Peak Voltage  
RAMP Valley Voltage  
RAMP Dynamic Range  
V
3.7  
1.6  
2.3  
1.0  
2.7  
20  
VSYNC = 0V  
RAMPDR = VRAMPPK Ð VRAMPVY  
V
V
V
RAMP Sleep Threshold Voltage VRAMP @ VREF < 2.0V  
V
SYNC Threshold  
VSYNC @ VRAMP > 2.5V  
V
SYNC Input Bias Current  
VSYNC = 0V; ISYNC flows out of pin  
µA  
Output Stage  
VG, High  
VSYNC = 5V; IVG = 200mA, VC Ð VG  
VSYNC = 0V; IVG = 200mA  
1.6  
0.9  
30  
2.5  
1.5  
75  
V
VG, Low  
V
VG Rise Time  
Switch VSYNC High; CG = 1nF;  
ns  
VCC = 15V; measure 2V to 8V  
VG Fall Time  
Switch VSYNC Low; CG = 1nF  
VCC = 15V; measure 8V to 2V  
40  
100  
100  
ns  
VG Resistance to Gnd  
VD Resistance to Gnd  
Remove supplies; VG = 10V  
Remove supplies; VD = 10V  
50  
k½  
½
500  
1500  
General  
I
I
CC, Operating  
CC in UVL  
VSYNC = 5V  
12  
300  
80  
20  
4
18  
500  
200  
50  
8
mA  
µA  
µA  
µA  
mA  
VCC = 6V  
ICC in Sleep Mode High  
CC In Sleep Mode Low  
VRAMP = 0V; VCC = 45V  
VRAMP = 0V; VCC = 10V  
I
IC, Operating High  
VSYNC = 5V; VFB = VISÐ = 0V;  
VC = 75V  
IC, Operating Low  
UVLO Start Voltage  
UVLO Stop Voltage  
UVLO Hysteresis  
VSYNC = 5V; VFB = VISÐ = 0V; VC = 8V  
3
6
mA  
V
7.4  
6.4  
0.8  
8.0  
7.0  
1.0  
280  
750  
9.2  
8.3  
1.2  
V
V
Leading Edge, tDELAY  
Trailing Edge, tDELAY  
VSYNC = 2.5V to VG = 8V  
VSYNC = 2.5V to VG = 2V  
ns  
ns  
Note 1: Guaranteed by design. Not 100% tested in production.  
3
Package Pin Description  
PIN SYMBOL  
PACKAGE PIN #  
14L PDIP 16L SO Wide  
FUNCTION  
1
2
1
2
3
SYNC  
VCC  
Synchronization input.  
Logic supply (10V to 45V).  
3
VREF  
LGnd  
VFB  
5.0V voltage reference.  
4
Logic level ground (Analog and digital ground tied).  
Error amplifier inverting input.  
5
6
7
6
COMP  
RAMP  
IS+  
Error amplifier output and compensation.  
RAMP programmable with the external capacitor.  
Current sense amplifier non-inverting input.  
Current sense amplifier inverting input.  
Current sense amplifier compensation and output.  
Power ground.  
7
8
8
9
9
10  
11  
12, 13  
14  
15  
16  
5
IS-  
10  
11  
12  
13  
14  
IS COMP  
PGnd  
VG  
External power switch gate drive.  
Output power stage supply voltage (8V to 75V).  
External FET DRAIN Voltage Monitor.  
Analog Ground.  
VC  
VD  
AGnd  
DGnd  
4
Digital Ground.  
Circuit Description  
Block Diagram  
VCC  
VD  
VC  
VCC  
REF  
+
+
Ð
+
Q1  
Q2  
+
SLEEP  
Ð
VREF  
5V  
OK  
UVL  
VG  
+
8V/7V  
LGnd  
0.7V  
Ð
PGnd  
Ð
IS COMP  
VCC  
5V  
EA  
5V  
24.6k  
Ð
+
IS-  
IS  
VFB  
Ð
+
IS+  
Ð
VC  
5V  
10k  
10k  
BUF  
Ð
Ð
+
+
PWM  
+
+
2V  
Q3  
Ð
+
2.4V  
5V  
COMP  
RAMP  
Ð
5V  
Q
Q
S
R
I = 200mA  
LATCH  
+
Ð
0.7V  
+
5V  
Ð
1.5V  
Ð
_
VCC OK  
+
+
5V  
RAMP  
+
Ð
Q4  
G1  
_
REF OK  
+
Ð
Ð
1.65V  
VCC  
5V  
+
4.5V/4.4V  
Ð
SYNC  
+
G2  
SYNC  
Ð
+
Ð
2.5V  
4
Circuit Description: continued  
The logic state of the LATCH can be changed only when  
Theory of Operation  
both the voltage level of the trailing edge of the power  
pulse at the SYNC pin is less than the threshold voltage of  
the SYNC comparator (2.5V) and the RAMP voltage is  
less than the threshold voltage of the RAMP comparator  
(1.65V). On the negative going transition of the secondary  
side pulse VSY, gate G2 output goes high, resetting the  
latch at time t3. Capacitor CR is discharged through tran-  
sistor Q4. CRÕs output goes low disabling the output stage,  
and the external power switch (an N-FET) is turned off.  
The CS5101 is designed to regulate voltages in multiple  
output power supplies. Functionally, it is similar to a  
magnetic amplifier, operating as a switch with a delayed  
turn-on. It can be used with both single ended and dual  
ended topologies.  
The VFB voltage is monitored by the error amplifier EA. It  
is compared to an internal reference voltage and the  
amplified differential signal is fed through an inverting  
amplifier into the buffer, BUF. The buffered signal is com-  
pared at the PWM comparator with the ramp voltage  
generated by capacitor CR. When the ramp voltage VR,  
exceeds the control voltage VC, the output of the PWM  
comparator goes high, latching its state through the  
LATCH, the output stage transistor Q1 turns on, and the  
external power switch, usually an N-FET, turns on.  
RAMP Function  
The value of the ramp capacitor CR is based on the  
switching frequency of the regulator and the maximum  
duty cycle of the secondary pulse VSY  
.
If the RAMP pin is pulled externally to 0.3V or below, the  
SSPR is disabled. Current drawn by the IC is reduced to  
less than 100µA, and the IC is in SLEEP mode.  
SYNC Function  
The SYNC circuit is activated at time t1 (Figure 1) when  
the voltage at the SYNC pin exceeds the threshold level  
(2.5V) of the SYNC comparator. The external ramp capac-  
itor CR is allowed to charge through the internal current  
source I (200µA). At time t2, the ramp voltage intersects  
with the control voltage VC and the output of the PWM  
comparator goes high, turning on the output stage and  
the external power switch. At the same time, the PWM  
comparator is latched by the RS latch, LATCH.  
FAULT Function  
The voltage at the VCC pin is monitored by the undervolt-  
age lockout comparator with hysteresis. When VCC falls  
below the UVL threshold, the 5V reference and all the cir-  
cuitry running off of it is disabled. Under this condition  
the supply current is reduced to less than 500µA.  
The VCC supply voltage is further monitored by the  
VCC OK comparator. When VCC is reduced below  
_
VREF - 0.7V, a fault signal is sent to gate G1. This fault sig-  
nal, which determines if VCC is absent, works in conjunc-  
tion with the ramp signal to disable the output, but only  
after the current cycle has finished and the RS latch is reset.  
Therefore this fault will not cause the output to turn off  
during the middle of an on pulse, but rather will utilize  
lossless turn-off. This feature protects the FET from over-  
voltage stress. This is accomplished through gate G1 by  
driving transistor Q4 on.  
V
SY  
V
SY  
1
2
0V  
V
V
C
RAMP  
V
+ V  
SY  
D
V
DS  
3
0V  
V
SY  
V
D
_
An additional fault signal is derived from the REF OK  
V
V
S
4
0V  
comparator. VREF is monitored so to disable the output  
through gate G1 when the VREF voltage falls below the  
V
Ð V  
OUT  
SY  
V
L1  
G
_
_
OK threshold. As in the VCC OK fault, the REF OK fault  
disables the output after the current cycle has been com-  
pleted. The fault logic will operate normally only when  
_
0V  
V
+ V  
D
OUT  
V
5
+ V  
SY  
C
D
V
V
REF voltage is within the specification limits of REF OK.  
6
0V  
Ground Level  
(Gate doesn't go  
below Gnd)  
t
t
t
3
t
4
t
1
1
2
DRAIN Function  
The drain pin, VD monitors the voltage on the drain of the  
power switch and derives energy from it to keep the out-  
put stage in an off state when VC or VCC is below the min-  
imum specified voltage.  
Figure 1. Waveforms for CS5101. The number to the left of each curve  
refers to a node on the Application Diagram.  
5
Circuit Description: continued  
S1  
8V – 45V  
C1  
1mF  
SW SPST  
R1  
100k  
R2  
100k  
V1  
100kHz  
0V to 5V Square Wave  
V
V
D
SYNC  
V
V
CC  
C
CS5101  
14 L PDIP  
V
V
REF  
G
C2  
0.1mF  
C3  
1nF  
LGnd  
PGnd  
R3  
5k  
V
IS COMP  
IS-  
FB  
COMP  
RAMP  
IS+  
R4  
2.2k  
C4  
0.1mF  
R7  
10k  
R5  
10k  
R6  
10k  
C5  
680pF  
CS5101 bench test  
6
Package Specification  
PACKAGE DIMENSIONS IN mm (INCHES)  
PACKAGE THERMAL DATA  
D
Thermal Data  
16L SOIC  
14L PDIP  
Lead Count  
Metric  
English  
RQJC  
RQJA  
typ  
typ  
23  
105  
48  
85  
ûC/W  
ûC/W  
Max  
Min  
18.67  
10.10  
Max  
.775  
.413  
Min  
.735  
.398  
14L PDIP  
16L SO Wide  
19.69  
10.50  
Plastic DIP (N); 300 mil wide  
7.11 (.280)  
6.10 (.240)  
1.77 (.070)  
1.14 (.045)  
8.26 (.325)  
7.62 (.300)  
2.54 (.100) BSC  
3.68 (.145)  
2.92 (.115)  
0.39 (.015)  
MIN.  
.356 (.014)  
.203 (.008)  
.558 (.022)  
.356 (.014)  
Some 8 and 16 lead  
packages may have  
1/2 lead at the end  
of the package.  
REF: JEDEC MS-001  
D
All specs are the same.  
Surface Mount Wide Body (DW); 300 mil wide  
7.60 (.299)  
7.40 (.291)  
10.65 (.419)  
10.00 (.394)  
0.51 (.020)  
0.33 (.013)  
1.27 (.050) BSC  
2.49 (.098)  
2.24 (.088)  
2.65 (.104)  
2.35 (.093)  
0.32 (.013)  
0.23 (.009)  
1.27 (.050)  
0.40 (.016)  
0.30 (.012)  
0.10 (.004)  
D
REF: JEDEC MS-013  
Ordering Information  
Part Number  
CS5101EN14  
CS5101EDW16  
Description  
14L PDIP  
16L SO Wide  
Ch erry Sem icon du ctor Corporation reserves th e  
righ t to m ake ch an ges to th e specification s with ou t  
n otice. Please con tact Ch erry Sem icon du ctor  
Corporation for th e latest available in form ation .  
CS5101EDWR16  
16L SO Wide (tape & reel)  
PATENTS PENDING  
© 1999 Cherry Semiconductor Corporation  
Rev. 3/31/97  
7

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