CSF10S60CT-A [CITC]

Super Low Barrier High Voltage Power Rectifier;
CSF10S60CT-A
型号: CSF10S60CT-A
厂家: Chip Integration Technology Corporation    Chip Integration Technology Corporation
描述:

Super Low Barrier High Voltage Power Rectifier

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中文:  中文翻译
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CSF10S60CT-A  
Super Low Barrier High Voltage Power Rectifier  
Chip Integration Technology Corporation  
Main Product Characteristics  
Outline  
IF(AV)  
VRRM  
TJ  
2x5A  
K
L
ITO-220AB  
60V  
Dimensions in inches(millimeters)  
symbol  
A
ØP  
150OC  
0.39V  
Min  
Max  
A
B
0.390(9.9)  
0.268(6.8)  
0.583(14.8)  
0.512(13.0)  
0.102(2.6)  
0.101(2.55)  
0.043(1.1)  
0.043(1.1)  
0.020(0.5)  
0.098(2.49)  
0.169(4.3)  
0.112(2.85)  
0.098(2.5)  
0.020(0.5)  
0.130(3.3)  
0.408(10.36)  
0.283(7.2)  
0.598(15.2)  
0.543(13.8)  
0.150(3.8)  
0.112(2.85)  
0.053(1.35)  
0.053(1.35)  
0.028(0.7)  
0.102(2.59)  
0.185(4.7)  
0.128(3.25)  
0.114(2.9)  
0.028(0.7)  
0.134(3.5)  
F
B
C
V(Typ)  
C
D
E
Marking code  
1
2
3
F
Features  
G
H
I
M
G
E
Low forward voltage drop.  
Excellent high temperature stability.  
Fast switching capability.  
H
J
D
K
I
L
M
N
ØP  
J
Suffix "G" indicates Halogen-free part, ex.CSF10S60CTG-A.  
Lead-free parts meet environmental standards of  
MIL-STD-19500 /228  
N
Alternate  
K
Dimensions in inches(millimeters)  
L
symbol  
A
ØP  
Min  
Max  
A
B
0.383(9.72) 0.404(10.27)  
F
Mechanical data  
0.248(6.3)  
0.571(14.5)  
0.516(13.1)  
-
0.094(2.4)  
0.039(1.0)  
0.039(1.0)  
0.020(0.5)  
0.095(2.41)  
0.169(4.3)  
0.055(1.4)  
0.091(2.3)  
0.014(0.35)  
0.122(3.1)  
0.272(6.9)  
0.610(15.5)  
0.547(13.9)  
0.161(4.1)  
0.126(3.2)  
0.051(1.3)  
0.051(1.3)  
0.035(0.9)  
0.105(2.67)  
0.189(4.8)  
0.122(3.1)  
0.117(2.96)  
0.031(0.8)  
0.142(3.6)  
B
C
C
D
E
Epoxy : UL94-V0 rated flame retardant.  
Case : JEDEC ITO-220AB molded plastic body.  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026.  
Polarity: As marked.  
Mounting Position : Any.  
Marking code  
1
2
3
F
G
H
I
M
G
E
H
J
D
K
I
L
M
N
ØP  
J
N
Weight : Approximated 2.25 gram.  
PIN 1  
PIN 3  
PIN 2  
Maximum ratings and electrical characteristics  
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Parameter  
Marking code  
Conditions  
Symbol  
CSF10S60CT-A  
CSF10S60CT  
UNIT  
V
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VRM  
IO  
60  
Forward rectified current (total device)  
10  
A
A
8.3ms single half sine-wave superimposed on  
rate load (JEDEC method)  
Forward surge current (per diode)  
IFSM  
250  
Peak repetitive reverse surge current  
(per diode)  
IRRM  
2us - 1kHz  
3
A
OC/W  
OC  
RθJC  
Thermal resistance(1)  
Junction to case  
15  
Operating and Storage temperature  
TJ, TSTG  
-55 ~ +150  
Parameter  
Conditions  
IF = 5A, TJ = 25OC  
IF = 5A, TJ = 125OC  
IF = 10A, TJ = 25OC  
VR = VRRM TJ = 25OC  
VR = VRRM TJ = 125OC  
Symbol  
VF  
MIN.  
TYP.  
390  
MAX.  
UNIT  
mV  
480  
420  
620  
0.5  
Forward voltage drop (per diode)  
IR  
Reverse current (per diode)  
mA  
100  
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.  
Document ID : DS-11KAB  
Revised Date : 2015/08/04  
Revision : C6  
1
CSF10S60CT-A  
Super Low Barrier High Voltage Power Rectifier  
Chip Integration Technology Corporation  
Rating and characteristic curves  
Fig. 1 - Instantaneous Forward  
Characteristics  
Fig.2 - Forward Current Derating Curve (per diode)  
100  
6
10  
TA=150°C  
4
2
TA=125°C  
1
TA=100°C  
TA=75°C  
0.1  
TA=50°C  
TA=25°C  
25  
50  
75  
100  
125  
OC)  
150  
Case Temperature,TC  
(
0.01  
0
0.1  
0.2 0.3  
0.4 0.5  
0.6  
0.7 0.8  
Instantaneous Forward Voltage,VF (Volts)  
Fig. 4 - Forward Power Dissipation (per diode)  
Fig. 3 - Reverse Characteristics  
8
100  
TA=150OC  
TA=125OC  
6
4
10  
1
TA=100OC  
TA=75OC  
TA=50OC  
0.1  
2
0
TA=25OC  
50 60  
0.01  
0
5
10  
15  
0
10  
20  
30  
40  
Reverse Voltage,VR (V)  
Average Forward Current,IF(AV) (A)  
Document ID : DS-11KAB  
Revised Date : 2015/08/04  
Revision : C6  
2
CSF10S60CT-A  
Super Low Barrier High Voltage Power Rectifier  
Chip Integration Technology Corporation  
CITC reserves the right to make changes to this document and its products and specifications at any  
time without notice.  
Customers should obtain and confirm the latest product information and specifications before final  
design, purchase or use.  
CITC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does CITC assume any liability for application assistance or customer product  
design.  
CITC does not warrant or accept any liability with products which are purchased or used for any  
unintended or unauthorized application.  
No license is granted by implication or otherwise under any intellectual property rights of CITC.  
CITC products are not authorized for use as critical components in life support devices or systems  
without express written approval of CITC.  
http://www.citcorp.com.tw/  
Tel:886-3-5600628  
Fax:886-3-5600636  
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)  
Document ID : DS-11KAB  
Revised Date : 2015/08/04  
Revision : C6  
3

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