MH07N65CT [CITC]
650V Silicon N-Channel Power MOSFET;
| 型号： | MH07N65CT |
| 厂家： | 
Chip Integration Technology Corporation |
| 描述： | 650V Silicon N-Channel Power MOSFET |
| 文件： | 总8页 (文件大小：1257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MH07N65CT
650V Silicon N-Channel Power MOSFET
■ Outline
■ Features
C
TO-220AB
A
Dimensions in inches(millimeters)
• Fast switching.
symbol
D
Min
10.10
15.0
8.90
4.30
2.30
1.20
0.70
0.35
1.17
3.30
12.70
2.34
2.40
3.70
Max
10.50
16.0
9.50
4.80
3.00
1.40
0.90
0.55
1.37
3.80
14.70
2.74
3.00
3.90
• ESD improved capability.
• Low gate charge.
• Low reverse transfer capacitances.
• 100% single pulse avalanche energy test.
A
B
B1
C
C1
D
E
F
Marking code
G
H
L
G
N
H
■ Mechanical data
Q
ØP
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220F molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Drain
E
N
N
F
C1
• Polarity: As marked.
Gate
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
Dimensions in inches and (millimeters)
Source
■ Absolute(TC = 25OC unless otherwise specified)
Symbol
VDSS
PARAMETER
CONDITIONS
MH07N65CT
UNIT
Drain-Source Voltage
650
7
V
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current(1)
Gate-Source Voltage
ID
TC = 100OC
A
4.5
IDM
VGS
EAS
IAR
28
±30
450
3.3
V
mJ
A
Single Pulse Avalanche Energy(2)
Avalanche Current(1)
Repetitive Avalanche Energy(1)
EAR
54
mJ
100
0.8
W
Power Dissipation
PD
Derating factor above 25OC
W/OC
V/ns
V
OC
OC
Peak Diode Recovery dv/dt(3)
Gate source ESD
dV/dt
VESD(G-S)
TJ, TSTG
TL
5.0
HBM-C = 100pf, R = 1.5kΩ
3000
-55 ~ +150
300
Operating and Storage Temperature Range
Maximum temperature for soldering
NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2.L=10.0mH, ID = 10.5A, Start TJ = 25OC.
3.ISD =7A,di/dt ≤100A/us, VDD≤BVDS, Start TJ = 25OC.
Document ID : DS-21M66
Revised Date : 2015/09/16
Revision : C1
1
MH07N65CT
650V Silicon N-Channel Power MOSFET
■ Electrical characteristics(TC = 25OC unless otherwise specified)
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
VDSS
PARAMETER
Drain-Source Breakdown Voltage
Bvdss Temperature Coefficient
VGS = 0V, ID = 250µA
ID = 250uA, Reference 25OC
VDS = 600V, VGS = 0V, Ta = 25°C
VDS = 480V, VGS = 0V, Ta = 125°C
VGS = 20V
650
V
BVDSS / TJ
0.61
V/OC
1
Drain-Source Leakage Current
IDSS
uA
uA
100
10
Gate-Source Leakage Current, Forward
Gate-Source Leakage Current, Reverse
IGSS(F)
IGSS(R)
VGS = -20V
-10
■ ON Characteristics
PARAMETER
CONDITIONS
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.5A
Symbol MIN. TYP. MAX. UNIT
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.4
V
RDS(on)
Static Drain-Source On-Resistance
0.98
Ω
■ Dynamic Characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
gfs
VDS = 15V, ID = 3.5A
Forward Transconductance
Input Capacitance
6.0
1072
100
17
S
Ciss
Coss
Crss
Output Capacitance
VDS = 25V, VGS = 0V, f = 1.0MHz
pF
Reverse Transfer Capacitance
■ Resistive Switching Characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
td(ON)
Turn-on Delay Time
Rise Time
10
tr
10
ID = 7A, VDD = 300V, VGS = 10V, RG = 4.7Ω
ns
td(OFF)
Turn-off Delay Time
Fail Time
37
tf
13
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
28
Qgs
ID = 7A, VDD = 300V, VGS = 10V
6
nC
Qgd
12
■ Source-Drain Diode Characteristics
PARAMETER
CONDITIONS
Boby Diode
Symbol MIN. TYP. MAX. UNIT
IS
ISM
VSD
trr
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
7
A
Boby Diode
28
1.5
IS = 7.0A, VGS = 0V
V
IS = 7A, TJ = 25OC, dIF/dt = 100A/μs,
VGS = 0V
Reverse recovery time
ns
267
Reverse recovery charge
Qrr
1562
uC
■ Thermal characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
RθJC
RθJA
Junction to Case
1.25
62
Thermal Resistance
OC/W
Junction to Ambient
■ Gate-source Zener Diode
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
Gate-Source Breakdown Voltage
IGS = ±1mA(open Drain)
VGSO
30
V
Document ID : DS-21M66
Revised Date : 2015/09/16
Revision : C1
2
MH07N65CT
650V Silicon N-Channel Power MOSFET
■ Rating and characteristic curves
Document ID : DS-21M66
Revised Date : 2015/09/16
Revision : C1
3
MH07N65CT
650V Silicon N-Channel Power MOSFET
■ Rating and characteristic curves
Document ID : DS-21M66
Revised Date : 2015/09/16
Revision : C1
4
MH07N65CT
650V Silicon N-Channel Power MOSFET
■ Rating and characteristic curves
Document ID : DS-21M66
Revised Date : 2015/09/16
Revision : C1
5
MH07N65CT
650V Silicon N-Channel Power MOSFET
■ Test circuit and waveform
Document ID : DS-21M66
Revised Date : 2015/09/16
Revision : C1
6
MH07N65CT
650V Silicon N-Channel Power MOSFET
■ Test circuit and waveform
Document ID : DS-21M66
Revised Date : 2015/09/16
Revision : C1
7
MH07N65CT
650V Silicon N-Channel Power MOSFET
■ CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
■ Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
■ CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
■ No license is granted by implication or otherwise under any intellectual property rights of CITC.
■ CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-21M66
Revised Date : 2015/09/16
Revision : C1
8
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