MSG061P03G [CITC]
P-Channel Enhancement Mode MOSFET;
| 型号： | MSG061P03G |
| 厂家： | 
Chip Integration Technology Corporation |
| 描述： | P-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：833K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Features
■ Pin Description
• -30V/-40A
RDS(ON) = 6.1mΩ (max.) @ VGS= -10V
RDS(ON) = 11mΩ (max.) @ VGS= -4.5V
• HBM ESD protection level pass 8KV.
• 100% UIS+Rg tested.
D
D
D
D
• Reliable and Rugged.
• Lead free and green device available
(RoHS compliant).
PIN 1
G
S
S
S
DFN3.3x3.3-8(Saw-EP)
Note: The diode connected between the gate and
source serves only as protection against ESD.
No gate overvoltage rating is implied.
( 5,6,7,8 )
DDD
D
■ Application
• Power management in notebook computer
portable equipment and battery powered
system.
(4)
G
S S S
(1, 2, 3)
P-ChannelMOSFET
■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
Symbol
VDSS
PARAMETER
CONDITIONS
MSL120N06G
UNIT
V
Drain-Source Voltage
-30
-40
TC = 25OC
TC = 100OC
TC = 25OC
ID
Continuous Drain Current(Note:2)
A
-40
IDM
VGSS
IS
Pulsed Drain Current(Note:2)
-160
±25
-40
Gate-Source Voltage
V
A
Diode Continuous Forward Current(Note:2)
Avalanche Current, single pulse (Note:1)
Avalanche Energy, single pulse (Note:1)
TC = 25OC
L=0.5mH
L=0.5mH
TC = 25OC
TC = 100OC
t ≤ 10s
IAS
27
A
EAS
182
62.5
25
mJ
Maximum Power Dissipation
PD
W
30
OC/W
OC
Thermal Resistance-Junction to Ambient
Operating and Storage Temperature Range
Maximum Power Dissipation
RθJA
TJ, TSTG
PD
Steady State
75
-55 ~ +150
4.2
TA = 25OC
TA = 70OC
TA = 25OC
TA = 70OC
Steady State
W
2.7
-21.3
-17.1
2
Continuous Drain Current
ID
A
OC/W
Thermal Resistance-Junction to case
RθJC
NOTE : 1.UIS tested and pulse width limited by maximum junction temperature 150OC (initial temperature TJ =25OC).
2.Package limited.
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
1
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Electrical characteristics(TA = 25OC unless otherwise specified)
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
-30
VGS = 0V, IDS = -250µA
VDS = VGS, IDS = -250µA
VDS = -24V, VGS = 0V
V
VGS(th)
-1.3
-1.8
-2.3
-1
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
IGSS
VDS = -24V, VGS = 0V, TJ = 85°C
VGS = ±20V, VDS = 0V
µA
-30
±10
6.1
11
VGS = -10V, IDS =-20A
VGS = -4.5V, IDS =-10A
4.9
8
RDS(on)
Drain-Source On-state Resistance(Note:3)
mΩ
■ Diode Characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
VSD
Diode Forward Voltage(Note:3)
Reverse Recovery Time(Note:4)
Reverse Recovery Charge(Note:4)
ISD = -1A, VGS = 0V
-0.7
19
6
-1
V
tRR
ns
nC
ISD = -20A, dISD/dt = 100A/μs
QRR
■ Dynamic Characteristics(Note:4)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
RG
VGS = 0V, VDS = 0V F = 1.0MHz
Gate Resistance
3
2862
593
470
20
Ω
Input Capacitance
Ciss
Coss
Crss
td(on)
tr
Output Capacitance
VDS = -15V, VGS = 0V, F = 1.0MHz
pF
Reverse Transfer Capacitance
Turn on Delay Time
Turn on Rise Time
Turn off Delay Time
Turn off Fall Time
19
VDD = -15V, RL = 15Ω, IDS = -1A
VGEN=-10V, RG = 6Ω
ns
td(off)
tf
93
56
■ Gate-Charge Characteristics(Note:4)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
VDS = -15V, VGS=-4.5V, IDS =-20A
Qg
Qg
Total Gate Charge
30
60
Total Gate Charge
nC
VDS = -15V, VGS=-10V, IDS =-20A
Qgs
Qgd
Gate-Source Charge
2.8
20
Gate-Drain Charge
NOTE : 3.Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.
4.Guranteed by design, not subject to production testing.
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
2
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Rating and characteristic curves
Power Dissipation
Drain Current
70
50
40
30
20
10
0
60
50
40
30
20
10
TC=25oC
0
TC=25oC,VG=-10V
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj- JunctionTemperature (°C)
Tj- JunctionTemperature (°C)
Safe Operation Area
Thermal Transient Impedance
500
100
3
1
Duty = 0.5
0.2
0.1
0.1
0.01
1E-3
1E-4
1E-5
0.05
0.02
0.01
1ms
10
10ms
DC
Single Pulse
TC=25oC
R
qJC :2oC/W
1
0.01
0.1
1
10
100 300
1E-6
1E-5
1E-4
1E-3
0.01
0.1
-
VDS - Drain - Source Voltage (V)
Square Wave PulseDuration (sec)
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
3
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Rating and characteristic curves
Output Characteristics
Drain-Source On Resistance
14
12
10
8
50
40
30
20
10
0
VGS=-4,-5,-6,-7,-8,-9,-10V
-3.5V
VGS=-4.5V
VGS=-10V
6
4
-3V
2
0
0
8
-
16
24
32
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-
VDS - Drain - Source Voltage (V)
ID-Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
30
25
20
15
10
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS=-250mA
IDS=-20A
0
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
-
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
4
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Rating and characteristic curves
Source-Drain Diode Forward
Drain-Source On Resistance
50
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGS = -10V
IDS = -20A
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 4.9mW
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75 100 125 150
Tj -Junction Temperature (°C)
-
-
-
Source
V
SD
Drain Voltage (V)
Capacitance
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
4500
4000
3500
3000
2500
2000
1500
1000
500
VDS=-15V
IDS=-20A
Frequency=1MHz
Ciss
Coss
Crss
0
10
20
30
40
50
60
0
0
5
10
15
20
25
30
-
VDS -Drain-Source Voltage (V)
QG -Gate Charge (nC)
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
5
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Avalanche Test circuit and waveform
VDS
L
tAV
DUT
EAS
VDD
RG
VDD
IAS
tp
IL
VDS
0.01W
tp
VDSX(SUS)
■ Switching Time Test circuit and waveform
VDS
RD
td(off) tf
td(on) tr
DUT
VGS
10%
VGS
RG
VDD
tp
90%
VDS
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
6
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Package Information
D
A
A1
A3
Pin 1
S
Y
M
B
O
L
DFN3.3x3.3B-8_EP1_S
MILLIMETERS
INCHES
MIN.
MAX.
1.00
0.05
MIN.
0.028
0.000
MAX.
0.039
0.002
A
0.70
0.00
A1
A3
b
0.203 REF
0.008 REF
0.010
0.25
2.90
2.25
2.90
1.65
0.40
3.10
2.55
3.10
1.9
0.016
0.122
0.1
D
0.114
0.089
E1
E
0.114
0.065
0.122
0.075
D1
e
0.65 BSC
0.026 BSC
L
0.30
0.43
0.012
0.017
0.020
0.50
K
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
7
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Carrier Tape & Reel Dimensions
P2
P0
D0
E1
T
F
W
B-B
B0
K0
D1
B-B
A-A
P1
A0
A-A
d
T1
A
H
T1
C
d
D
W
E1
F
Application
12.4+2.00 13.0+0.50
330.0±2.00 50 MIN.
P0 P1
1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.10
-0.00
-0.20
DFN3.3x3.3B-8_EP
P2
D0
D1
T
A0
B0
K0
1.5+0.10
-0.00
4.0±0.10 8.0±0.10 2.0±0.10
1.5 MIN.
3.6±0.20 3.6±0.20 1.2±0.10
(mm)
0.3±0.10
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
8
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Taping Direction Information
USER DIRECTION OF FEED
■ Device per reel
Package Type
DFN3.3x3.3B-8_EP
Unit
Quantity
Tape & Reel
3000
■ Classification Profile
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
9
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Classification Reflow Profile
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 C
150 C
°
°
Temperature min (Tsmin
)
150 C
°
200 C
°
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
°
60-150 seconds
217 C
°
60-150 seconds
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
Time (t )** within 5 C of the specified
°
P
20** seconds
30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Volume mm3
<350
Thickness
≥
<2.5 mm
235 C
220 C
°
°
2.5 mm
≥
220 C
220 C
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
<350
Volume mm3
350-2000
260 °C
Volume mm3
>2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
250 °C
245 °C
245 °C
245 °C
■ Reliability Test Program
Test item
Method
Description
SOLDERABILITY
HTRB
HTGB
PCT
TCT
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
10
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
■ Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
■ CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
■ No license is granted by implication or otherwise under any intellectual property rights of CITC.
■ CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
11
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