SIC12C60 [CITC]
12A SiC Schottky Diode;![SIC12C60](http://pdffile.icpdf.com/pdf2/p00350/img/icpdf/SIC12C60_2153691_icpdf.jpg)
型号: | SIC12C60 |
厂家: | ![]() |
描述: | 12A SiC Schottky Diode |
文件: | 总4页 (文件大小:809K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SIC12C60
12A SiC Schottky Diode
■ Features
■ Outline
• Low Conduction and Switching Loss
• Positive Temperature Coefficient on Vf
• Temperature Independent Switching Behavior
• Fast Reverse Recovery
• High Surge Current Capability
• Pb-free lead plating
■ Benefits
• Higher System Efficiency
• Parallel Device Convenience
• High Temperature Application
• High Frequency Operation
• Hard Switching & High Reliability
• Environmental Protection
2
1
1
2
■ Applications
• SMPS
Package TO-220-2L
Inner Circuit
• PFC
• Solar/Wind Renewable Energy
• Power Inverters
• Motor Drives
■ Maximum ratings and electrical characteristics
Parameter
Conditions
Symbol
SIC12C60
UNIT
Marking code
SIC12C60
600
600
600
26
TJ=25OC
TJ=25OC
TJ=25OC
Tc=25OC
Peak Repetitive Reverse Voltage
VRRM
VRSM
VR
V
V
V
Peak Reverse Surge Voltage
DC Blocking Voltage
Tc=135OC
Tc=145OC
12
Continuous Forward Current
IF
A
A
10
Tc=25OC,Tp=10ms,Half Sine-Wave
Tc=125OC,Tp=10ms,Half Sine-Wave
Tc=25OC,Tp=10us,Pulse
Tc=25OC,Tp=10ms,Half Sine-Wave,D=0.1
Tc=125OC,Tp=10ms,Half Sine-Wave,D=0.1
Tc=25OC
67
61
Non-Repetitive Peak Forward surge current
IFSM
451
51
Repetitive Peak Forward surge current
Power Dissipation
IFRM
A
46
88
PD
W
OC
Tc=125OC
29
175
TJ
Tstg
Operation Junction and Storage Temperature
-55 to 175
1.7
OC/W
UNIT
V
Thermal Resistance Junction to Case
Parameter
RƟJC
Conditions
IR=100uA,TJ=25OC
IF=10A,TJ=25OC
IF=10A,TJ=175OC
VR=600V,TJ=25OC
VR=600V,TJ=125OC
Symbol
VDC
MIN.
TYP.
>650
1.5
MAX.
DC Blocking Voltage
1.8
2.2
50
Forward Voltage
VF
V
1.9
<1
Reverse Current
IR
uA
nC
15
160
IF=10A,dI/dt=300A/us,
19
Total Capacitive Charge
QC
VR=400V,TJ=25OC
VR=1V,TJ=25OC,f=1MHz
VR=200V,TJ=25OC,f=1MHz
VR=400V,TJ=25OC,f=1MHz
398
53
Total Capacitive
C
pF
52
Document ID : DS-21KHO
Revised Date : 2015/09/09
Revision : C1
1
SIC12C60
12A SiC Schottky Diode
■ Rating and characteristic curves
Document ID : DS-21KHO
Revised Date : 2015/09/09
Revision : C1
2
SIC12C60
12A SiC Schottky Diode
■ Outline
TO-220-2L
A
C2
A1
ØP
D
F
b,b2
PLATING
( C )
BASE METAL
C1
Ø1.5 Ε-Pin
b2(3X)
E1
E
Marking code
L2
L1
b1,b3
SECTION C-C & D-D
D
C
D
b
C
L
e
e1
C
PIN 1 PIN 2
G
Dimensions in inches(millimeters)
symbol
Min
Nom
Max
A
A1
b
b1
b2
b3
c
0.176(4.470)
0.099(2.520)
0.184(4.670)
0.111(2.820)
0.028(0.710) 0.032(0.813) 0.036(0.910)
0.028(0.710) 0.036(0.910)
0.046(1.170) 0.050(1.270) 0.054(1.370)
0.046(1.170)
0.011(0.279)
0.011(0.279)
0.046(1.170)
0.394(10.010)
0.054(1.370)
0.019(0.483)
0.017(0.432)
0.054(1.370)
0.406(10.310)
c1
c2
D
E
0.345(8.763) 0.350(8.890) 0.355(9.017)
E1 0.484(12.294) 0.490(12.446) 0.494(12.548)
e
e1
F
G
L
L1
L2
ØP
0.1(2.54) BSC
0.196(4.980)
0.104(2.642) 0.108(2.743) 0.116(2.946)
0.204(5.180)
0.000(0.000)
0.539(13.7)
0.159(4.04)
0.005(0.127)
0.555(14.10)
0.165(4.19)
0.063(1.60)
0.153(3.890)
0.162(4.11)
0.149(3.790)
NOTES:
1.All dimension are in mim[inch].
2.Tolerance:±0.004inch.
Document ID : DS-21KHO
Revised Date : 2015/09/09
Revision : C1
3
SIC12C60
12A SiC Schottky Diode
■ CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
■ Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
■ CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
■ No license is granted by implication or otherwise under any intellectual property rights of CITC.
■ CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-21KHO
Revised Date : 2015/09/09
Revision : C1
4
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